Browsing by Author "Wen, WY"

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A macro model of silicon spiral inductor
(2002-05-01)
Su, CY
;
Chen, LP
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Chang, SJ
;
Tseng, BM
;
Lin, DC
A new automatic parameter extraction method for modeling Of silicon Spiral inductors is presented. The Concepts on self-resonance frequency (f(sr)) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviours or silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation commercial silicon radiofrequency (RF) Circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without an optimization, also provide a rule to fairly, effectively and phsically judge the performance of a spiral inductor. (C) 2002 Elsevier Science Ltd. All rights reserved.
Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs
(2002-01-01)
Chen, JH
;
Lei, TF
;
Chen, CL
;
Chao, TS
;
Wen, WY
This work describes a high performance and reliable deep submicrometer n-channel metal oxide semiconductor field effect transistor (n-MOSFET) with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. The results herein reveal that the performance and reliability, including the leakage current of the ultrathin gate oxide, charge-to-breakdown, drain current, transconductance, charge pumping current, stress induced leakage current, and hot carrier reliability of n-MOSFETs are all significantly improved. The enhanced reliability and performance are attributed to the native-oxide-free process, smooth interface, and reduced incorporation of As in the gate oxide which results from HF vapor cleaning and nitrogen implantation. (C) 2001 The Electrochemical Society.