Browsing by Author "Wen, Yong-Ru"

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A BENDING N-WELL BALLAST LAYOUT TO IMPROVE ESD ROBUSTNESS IN FULLY-SILICIDED CMOS TECHNOLOGY
(2010)
Wen, Yong-Ru
;
Ker, Ming-Dou
;
Chen, Wen-Yi
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Ballast technique has been reported as a cost effective method to improve ESD robustness of fully-silicided devices without using silicide block. In this work, a new ballast technique, the bending N-Well (BNW) ballast structure, is proposed to enhance ESD robustness of fully-silicided NMOS. With a deep N-Well to cover the fully-silicided NMOS with BNW ballast structure, ESD robustness of the NMOS can be further improved by enhancing the turn-on uniformity among the multi-fingers of the NMOS.