Browsing by Author "Weng, Shih-Chang"

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Anti-site defect effect on the electronic structure of a Bi2Te3 topological insulator
(2018-01-01)
Chuang, Pei-Yu
;
Su, Shu-Hsuan
;
Chong, Cheong-Wei
;
Chen, Yi-Fan
;
Chou, Yu-Heng
Tuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L-3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TIbased advanced electronic and spintronic devices.
Robustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal
(2016-11-18)
Lee, Chao-Kuei
;
Cheng, Cheng-Maw
;
Weng, Shih-Chang
;
Chen, Wei-Chuan
;
Tsuei, Ku-Ding
A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb2Te2Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb2Te2Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb2Te2Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb2Te2Se compound has a great potential for future atmospheric applications.
Using in-situ synchrotron x-ray diffraction to investigate phase transformation and lattice relaxation of a three-way piezo-phototronic soft material
(2017-07-01)
Ko, Wen-Ching
;
Hsu, Yu-Hsiang
;
Weng, Shih-Chang
;
Chang, Chung-Kai
;
Lee, Ming-Tao
A poly(vinylidene fluoride-co-trifluoro-ethylene) piezoelectric polymer is blended with nano particles of titanium oxide phthalocyanine to bridge photoconductive and piezoelectric effects. In this study, a system is examined by in situ synchrotron x-ray to test a three-way piezo-phototronic soft-material design. The sample is heated for in situ phase transformation characterization. The semi-crystalline poly (vinylidene fluoride-co-trifluoro-ethylene) polymer gradually transforms to an amorphous structure. A complementary piezoelectric experiment before and after the heating experiment shows that the piezoelectric performance is proportional to the phase ratio. Secondly, the system is examined to test its phototronic effect. Piezoelectric responses are measured by controlling the light illumination. The positive and negative controls of light illumination which validate this newly-designed system can be modulated by a three-way piezo-phototronic effect. In-situ synchrotron x-ray diffraction experiments are employed to measure the microstructure evolution as a function of applied voltage up to 800 V. We then turned off both the light and the applied voltage to examine the kinetic behavior of the system. There is orientation-dependent anisotropic relaxation. We compared the lattice-strain evolutions. Piezo-phototronic creep is found in the (110), but not the (310) planes.