Browsing by Author "Wong, Ying-Chieh"

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Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications
(2019-06-07)
Yao, Jing-Neng
;
Lin, Yueh-Chin
;
Wong, Ying-Chieh
;
Huang, Ting-Jui
;
Hsu, Heng-Tung
Composite channel (In0.65Ga0.35As/InAs/In0.65Ga0.35As) high electron mobility transistors (HEMTs) with pi-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the pi-gate device for evaluation. The pi-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and I-ON/I-OFF ratio of 3 x 10(4) at V-DS = 0.5 V at room temperature. These results indicated that the designed pi-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications. (c) 2019 The Electrochemical Society.