Browsing by Author "Wu, C. -Y."

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Demonstration of an optical FIFO multiplexer
(2008-01-01)
Feng, K-M.
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Wu, C. -Y.
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Hsueh, D. -H.
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Ku, C. -S.
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Chang, C. -P.
A novel 2-to-1 optical FIFO multiplexer under a simple packet routing policy, with maximum buffer size 2((n-2))-1, is proposed and experimentally demonstrated using an nxn AWG, wavelength converters and fiber delay lines at 10 Gbps. (c) 2008 Optical Society of America.
Enhancing the Solubility of n-Type Diketopyrrolopyrrole-Dicyanovinyl Molecules with Hybrid Siloxane Group for Solution-Processable Organic Field-Effect Transistor
(2019-01-01)
Prakoso, S. P.
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Ciou, G. -T.
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Lin, H. -Y.
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Peng, W. -C.
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Sie, J. -H.
Diketopyrrolopyrrole (DPP) organic dye is well-known to have poor solubility in most common organic solvents. In general, flexible alkyl chain is used to enhance the solubility of conjugated small molecules by disrupting the attraction between molecules. In this study, we have integrated hybrid organic-inorganic siloxane group as a solubilizing agent on DPP molecule carrying dicyanovinyl (DCV) as an electron-withdrawing group. UV-Vis absorption spectra were collected to evaluate the optical properties of these compounds. The electrical performances of these organic semiconductors were examined by fabricating into transistor device with them as active channel layer in the bottom gate staggered configuration. Furthermore, the molecular packing in thin films from this series was investigated by 2D grazing incident x-ray diffraction (GIXD) in relationship with device performances. It is shown that the siloxane group at the side chain of DPP effectively enhances the solubility of this molecule compared to DPP molecule with branched alkyl chain from previous study. A better solubility allows for device fabrication by solution process yet improves crystallinity of organic films and thus its electrical device performance.
Full Low Temperature Microwave Processed Ge CMOS Achieving Diffusion-Less Junction and Ultrathin 7.5nm Ni Mono-Germanide
(2012-01-01)
Lee, Y. -J.
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Chuang, S. -S.
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Liu, C. -I.
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Hsueh, F. -K.
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Sung, P. -J.
For the first time, Ge CMOS with all thermal processes performed by microwave annealing (MWA) has been realized. The full MWA process is under 390 degrees C. It significantly outperforms conventional rapid thermal annealing (RTA) process in 3 aspects: (1) Diffusion-less junction: for easily diffused n-type dopant, phosphorous (P), the ion implantation dopant profile after the MWA activation process remains unchanged. (2) Increased C-ox and lower gate leakage: the low temperature activation process leads to less Ge out-diffusion during MWA than RTA, suppressing the degradation of gate dielectric/ Ge channel interface. (3) Ultrathin 7.5nm Ni mono-germanide with low sheet resistance (Rs) and contact resistivity: after two-step MWA, a thin mono-NiGe layer was obtained which has larger crystallite size to lower Rs. Ge n- and p-MOSFET were also demonstrated. Compared to conventional RTA, the MWA gives 50% and 24% drive current enhancement for p- and n-MOSFET, respectively. These data show that the low temperature MWA is a very promising thermal process technology for Ge CMOS manufacturing.
Responses of Rabbit Retinal Ganglion Cells to Subretinal Electrical Stimulation With a Silicon - Based Microphotodiode Array
(2010-04-01)
Chiao, C. -C.
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Yang, Y. -T.
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Wan, C.
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Yang, W. -C.
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Lin, L. -J
TRANSMISSION ZERO DESIGN GRAPH FOR DUAL-MODE DUAL-BAND FILTER WITH PERIODIC STEPPED-IMPEDANCE RING RESONATOR
(2010)
Chiou, Y. -C.
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Yang, P. -S.
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Kuo, J. -T.
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Wu, C. -Y.
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傳播研究所
Compact dual-mode dual-band bandpass filters are realized with a single periodic stepped-impedance ring resonator. Neither extra resonator nor substrate layer is required for implementing the second passband. Based on the transmission line theory, a transmission zero design graph consisting of the transmission zeros together with the resonant frequencies of the resonator is developed against the space separation angle between the input and output ports. Based on this graph, when the line-to-ring feed structure is implemented, the space angle can be determined for the dual-mode dual-band design with designated zeros near the two passbands. It is believed that this is the first design graph for designating the transmission poles and zeros of a dual-mode ring resonator filter before the excitation structure is realized. Three dual-mode dual-band bandpass filters are carried out for demonstration. All circuits occupy only 60% of the area of the conventional ring resonator bandpass filter at the first frequency. Measured results of experimental circuits show good agreement with simulated responses.