Browsing by Author "Wu, Chen-Ying"

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Plasmonic Green Nanolaser Based on a Metal-Oxide-Semiconductor Structure
(2011-10-01)
Wu, Chen-Ying
;
Kuo, Cheng-Tai
;
Wang, Chun-Yuan
;
He, Chieh-Lun
;
Lin, Meng-Hsien
Realization of smaller and faster coherent light sources is critically important for the emerging applications in nanophotonics and information technology. Semiconductor lasers are arguably the most suitable candidate for such purposes. However, the minimum size of conventional semiconductor lasers utilizing dielectric optical cavities for sustaining laser oscillation is ultimately governed by the diffraction limit (similar to(lambda/2n)(3) for three-dimensional (3D) cavities, where lambda is the free-space wavelength and n is the refractive index). Here, we demonstrate the 3D subdiffraction-limited laser operation in the green spectral region based on a metal oxide semiconductor (MOS) structure, comprising a bundle of green-emitting InGaN/GaN nanorods strongly coupled to a gold plate through a SiO(2) dielectric nanogap layer. In this plasmonic nanocavity structure, the analogue of MOS-type "nanocapacitor" in nanoelectronics leads to the confinement of the plasmonic field into a 3D mode volume of 8.0 x 10(-4) mu m(3) (similar to 0.14(lambda/2n)(3)).
Strong green photoluminescence from In(x)Ga(1-x)N/GaN nanorod arrays
(2009-09-28)
Hong, Chi-Chang
;
Ahn, Hyeyoung
;
Wu, Chen-Ying
;
Gwo, Shangjr
;
光電工程學系
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (In(x)Ga(1-x)N) nanorod arrays. The formation of In(x)Ga(1-x)N/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for In(x)Ga(1-x)N nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
(2009-09-28)
Hong, Chi-Chang
;
Ahn, Hyeyoung
;
Wu, Chen-Ying
;
Gwo, Shangjr
;
光電工程學系
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
Strong Photolumineseence from InGaN/GaN Nanorods Arrays Studies by Time-Resolved Photolumineseence
(2009)
Hong, Chi-Chang
;
Ahn, Hyeyoung
;
Wu, Chen-Ying
;
Gwo, Shangjr
;
光電工程學系
We report more than one order of magnitude stronger green photoluminescence from InGaN/GaN nanorods arrays compare to that from InGaN epilayer and its emission mechanism studied by time-resolved and temperature-resolved photoluminescene measurement. (C)2009 Optical Society of America