Browsing by Author "Wu, Chi-Wei"

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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
(1970-01-01)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Wu, Chi-Wei
;
Lo, Wen-Hung
;
Chen, Ching-En
"This letter investigates a hump in gate current after dynamic negative bias stress (NBS) in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. By measuring gate current under initial through body floating and source/drain floating, it shows that hole current flows from source/drain. The fitting of gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after dynamic NBS, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739525]"
Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors
(2012-12-03)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Lu, Ying-shin
;
Lo, Wen-Hung
;
Chen, Ching-En
This letter investigates anomalous traps measured by charge pumping technique in high voltage in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors. N-V-high level characteristic curves with different duty ratios indicate that the electron discharge time dominates the value of N for extra traps. By fitting ln (N (t(base level) = 2.5 mu s)-N (t(base level)))-Delta t(base level) at different temperatures and computing the equation t = tau(0) exp (alpha(e,SiO2)d(SiO2) + alpha(e,HfO2)d(HfO2,trap)), results show that these extra traps measured by the charge pumping technique at high voltage can be attributed to high-k bulk shallow traps. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769444]
Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1-xO2 and HfO2/Metal Gate Stacks
(2013)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Wu, Chi-Wei
;
Lo, Wen-Hung
;
Chen, Ching-En
In this study, the authors investigated an anomalous gate current hump after dynamic negative bias stress (NBS) and negative-bias temperature-instability (NBTI) in HfxZr1-xO2 and HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. This result is attributed to hole trapping in high-k bulk. Measuring gate current under initial through body floating and source/drain floating conditions indicates that holes flow from source/drain to gate. The fitting of the gate current-gate voltage characteristic curve demonstrates that Frenkel-Poole mechanism dominates the conduction under initial. Next, fitting the gate current after dynamic NBS and NBTI indicates Frenkel-Poole then tunneling mechanisms, finally returning to the Frenkel-Poole mechanism. These phenomena can be attributed to hole trapping in high-k bulk and the formula Ehigh-k epsilon(high-k) = Q + E-sio2 epsilon(sio2). To further understand the gate current hump, both Zr-undoped and 8 similar to 10% Zr-doped in high-k bulk devices were used for comparisons. These results indicate that initial gate current is also a significant factor in generating the anomalous gate current hump, and all results obey the hump generation condition of J(Tunneling) << J(Frenkel-Poole). (C) 2013 The Electrochemical Society. All rights reserved.
Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors
(2013-01-07)
Ho, Szu-Han
;
Chang, Ting-Chang
;
Wu, Chi-Wei
;
Lo, Wen-Hung
;
Chen, Ching-En
This Letter investigates a hump in gate current after negative-bias temperature-instability (NBTI) in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors. Measuring gate current at initial through body floating and source/drain floating shows that hole current flows from source/drain. The fitting of gate current (I-g)-gate voltage (V-g) characteristic curves demonstrates that the Frenkel-Poole mechanism dominates the conduction. Next, by fitting the gate current after NBTI, in the order of Frenkel-Poole then tunneling, the Frenkel-Poole mechanism can be confirmed. These phenomena can be attributed to hole trapping in high-k bulk and the electric field formula Ehigh-k epsilon(high-k) = Q+E-sio2 epsilon(sio2). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773479]
Structural and optoelectronic properties of GZO/SiOx bilayer films by atmosphere pressure plasma jet
(2012)
Chang, Kow-Ming
;
Ho, Po-Ching
;
Wu, Chi-Wei
;
Wu, Chin-Jyi
;
Chang, Chia-Chiang
Using simple technique to obtain high haze and high conductivity TCO films to enhance optical absorption for silicon thin film solar cell is important. The bilayer GZO film of high haze and low resistivity is achieved by atmosphere pressure plasma jet (APPJ). Thickness of bilayer GZO film was thinner than Asahi-U type FTO film and this result indicated that the APPJ deposition technique has lower material comsumption. The minimum resistivity of 6.00x10(-4) was achieved at 8 at% gallium doping. Xray diffraction spectrum showed that an increase in scanning times led to an increase in crystallinity of bilayer GZO films. The bilayer GZO film has much higher haze value in the visible and NIR regions as compared to Asahi U-type FTO film.