Browsing by Author "Wu, Chia-Yang"

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Effect of Annealing on the Microstructure and Electrical Property of RuN Thin Films
(2011)
Wu, Chia-Yang
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Lee, Wen-Hsi
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Chang, Shih-Chieh
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Cheng, Yi-Lung
;
Wang, Ying-Lang
Ruthenium (Ru) and ruthenium nitride (RuN) thin films have been investigated as candidates for barrier layers in copper (Cu) damascene processes. In order to study the thermal stability of the Ru and RuN films, the as-deposited films were annealed by rapid thermal annealing (RTA), and the film resistance was real-time measured by a four-point probe, which was embedded in the RTA tool. The X-ray diffraction data show that the grain size of Ru decreased with the increase of the nitrogen (N) content. The Ru phases gradually changed to the RuN phases, and the resistivity of the RuN films decreased with annealing time due to nitrogen effusion. Discontinuous RuN films were found when the annealing temperature was higher than 800 degrees C and then caused a poor Cu diffusion barrier property. We also demonstrated that the Cu film could be directly electroplated on the RuN films with adequate adhesion. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3537825] All rights reserved.
Investigation of Barrier Property of Copper Manganese Alloy on Ruthenium
(2015-03-01)
Su, Yin-Hsien
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Wu, Sze-Ann
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Wu, Chia-Yang
;
Wang, Ying-Lang
;
Lee, Wen-Hsi
This paper investigates the properties of CuMn/Ru/SiO2. The optimal concentration of Mn in the CuMn alloy as a barrier layer in this structure is determined. The properties of CuMn/Ru/SiO2 are compared to those of CuMn/SiO2 and CuMn/Ta/SiO2. The electrical and material properties of CuMn (010 at.% Mn) alloy films deposited on SiO2, Ta, and Ru are studied. A diffusion barrier layer self-formed at the interface during annealing, and the growth behavior followed a logarithmic rate law. The microstructures of the CuMn films are analyzed using transmission electron microscopy and are correlated with the electrical properties. After thermal treatment, only Cu-5 at.% Mn/SiO2 did not exhibit a diffusion of Cu atoms. After annealing, the thermal stability of films grown on Ru/SiO2 was better than that of films grown on SiO2 and Ta/SiO2. When a Ta or Ru layer was added, the Mn atoms diffused not only to the interface but also to the grain boundaries in the under layer and to the interface between the under layer and SiO2. The tolerance of Mn content increased when the Ru layer was used, and thus, CuMn/Ru prevented the diffusion of Cu after heat treatment at 600 degrees C for 30 min.
Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers
(2011-12-01)
Wu, Chia-Yang
;
Lee, Wen-Hsi
;
Chang, Shih-Chieh
;
Wang, Ying-Lang
;
照明與能源光電研究所
In this study, we investigated the galvanic effect between the Cu metals and ruthenium nitride (RuNx) films that were deposited at various nitrogen (N-2) gas flow rates in chemical mechanical polishing slurries. It was found that the galvanic corrosion of the RuNx films was inhibited with increasing N-2 gas flow ratio, whereas the galvanic corrosion of the Cu seed layers was enhanced. Electrochemical impedance spectroscopy showed that the galvanic corrosion resistance of RuNx increased and that of the ruthenium oxide layer decreased as N-2 flow ratio increased. This was because the increase in the N content in the RuNx films inhibited the corrosion and oxidation of the Ru metals. (C) 2011 The Japan Society of Applied Physics
Investigation the Electroplating Behavior of Self Formed CuMn Barrier
(2013-08-01)
Wu, Chia-Yang
;
Lee, Wen-Hsi
;
Chang, Shih-Chieh
;
Wang, Ying-Lang
;
照明與能源光電研究所
The electrical and material properties of Copper (Cu) mixed with [0 similar to 10 atomic% manganese (Mn)] and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are explored. Cu electroplating on self formed CuMn barrier was investigated with different Mn content. The electrochemical deposition of the Cu thin film onto the electrode using CuMn barrier was investigated. Scanning electron microscopic (SEM) micrographs of copper electroplating on CuMn films were examined, and the copper nucleation behaviors changed with the Mn content. Since the electrochemical impedance spectroscopy (EIS) is widely recognized as a powerful tool for the investigation of electrochemical behaviors, the tool was also used to verify the phenomena during plating. It was found that the charge-trasfer impedance decrease with the rise in the Mn content below 5%, but increase with the rise in the Mn content higher than 5%. The result was corresponded to the surface energy, the surface morphology, the corrosion and the oxidation of the substrate.