Browsing by Author "Wu, Chien-Ying"

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A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
(2009)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Wu, Chien-Ying
;
Chang, Edward Yi
;
Miyamoto, Yasuyuki
A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.
A Novel Metamorphic High Electron Mobility Transistors with (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice Channel Layer for Millimeter-Wave Applications
(2009)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Lu, Jung-Chi
;
Chang, Edward Yi
;
Wu, Chien-Ying
High performance MHEMTs using (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80 nm gate length exhibit high drain current density of 392 mA/mm at drain bias 1.0 V and transconductance of 991 mS/mm at drain bias 1.2 V. Comparison with regular In(x)Ga(1-x)As channel, the superlattice channel HEMTs show an outstanding performance because of high electron mobility, and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. The current gain cutoff frequency (f(T)) and maximum oscillation frequency (f(max)) were extracted to be 304 GHz and 162 GHz, respectively. The device demonstrated a 0.75 dB noise figure with an associated gain 9.6 dB at 16 GHz. The excellent device performance shows that the superlattice channel can be practically used for high-frequency and millimeter-wave application.
DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source-Drain Spacing Technology
(2010)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chang, Edward Yi
;
Miyamoto, Yasuyuki
;
Wu, Chien-Ying
A 70 nm InAs channel quantum well field effect transistor (QWFET) fabricated by a narrowing source-drain (S/D) spacing technique was realized for future high-speed and logic applications. The S/D spacing was decreased from 3 to 0.65 mu m through a simple fabrication process, which is an ameliorative redeposition ohmic technique. The drain-source current density and transconductance of the device were increased from 391 to 517 mA/mm and from 946 to 1348 mS/mm after the scaling of the S/D spacing, respectively. In addition, the current gain cutoff frequency (f(T)) was also increased from 185 to 205 GHz. These results show that the easy method can effectively improve the III-V QWFET device performance for high-frequency and high-speed applications. (C) 2010 The Japan Society of Applied Physics
Evaluation of RF and Logic Performance for 40 nm InAs/InGaAs Composite Channel HEMTs for high-speed and low-voltage applications
(2008)
Wu, Chien-Ying
;
Hsu, Heng-Tung
;
Kuo, Chien-I
;
Chang, Edward Yi
;
Chen, Yu-lin
The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In(0.53)Ga(0.47)As sub-channel were demonstrated. The drain current was 870 mA/mm (V(ds)=0.4V, V(gs) OV) and maximum g(m) was 1750 mS/mm (V(ds)=0.5V, V(gs)=-0.65V). The devices showed high current gain cutoff frequency (f(T)) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAS HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
(2010-12-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Wu, Chien-Ying
;
Chang, Edward Y.
;
Chen, Yu-Lin
Forty-nanometer lnAs HEMT devices fabricated by two-step recess and Pt-buried gate were demonstrated for low-noise and low-power millimeter wave applications. The device exhibited a high transconductance of 1650 mS/mm at a drain voltage of 0.5 V. Improvement of the current-gain cutoff frequency from 395 GHz to 423 GHz was achieved with minimum noise figure below 2.5 dB up to 64 GHz at only 4.33 mW DC power consumption level. Besides, the output conductance was decreased from 2400 mS/ mm to 325 mS/mm. These superior performances are attributed to mitigation of the short-channel effect through the proposed technology. (C) 2010 Elsevier B.V. All rights reserved.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (In(x)Ga(1-x)As)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (In(x)Ga(1-x)As)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular In(x)Ga(1-x)As channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (In(x)Ga(1-x)As)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NF(min)) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
(2010-07-01)
Kuo, Chien-I
;
Hsu, Heng-Tung
;
Chen, Yu-Lin
;
Wu, Chien-Ying
;
Chang, Edward Yi
High-performance metamorphic high-electron mobility transistors (MHEMTs) using an (InxGa1-xAs)(m)/(InAs)(n) superlattice structure as a channel layer have been fabricated successfully. These HEMTs with 80-nm gate length exhibited a high drain current density of 392 mA/mm and a transconductance of 991 mS/mm at 1.2-V drain bias. Compared with a regular InxGa1-xAs channel, the superlattice-channel HEMTs showed an outstanding performance due to the high electron mobility and better carrier confinement in the (InxGa1-xAs)(m)/(InAs)(n) channel layer. When biased at 1.2 V, the current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were extracted to be 304 and 162 GHz, respectively. As for noise performance, the device demonstrated a 0.75-dB minimum noise figure(NFmin) with an associated gain of 9.6 dB at 16 GHz. Such superior performance has made the devices with a superlattice channel well suitable for millimeter-wave applications.