Browsing by Author "Wu, Chun-Yi"
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Item type:Item, A patent quality analysis for innovative technology and product development(2012-01-01) ;Trappey, Amy J. C. ;Trappey, Charles V. ;Wu, Chun-Yi ;Lin, Chi-Wei管理科學系Enterprises evaluate intellectual property rights and the quality of patent documents in order to develop innovative products and discover state-of-the-art technology trends. The product technologies covered by patent claims are protected by law, and the quality of the patent insures against infringement by competitors while increasing the worth of the invention. Thus, patent quality analysis provides a means by which companies determine whether or not to customize and manufacture innovative products. Since patents provide significant financial protection for businesses, the number of patents filed is increasing at a fast pace. Companies which cannot process patent information or fail to protect their innovations by filing patents lose market competitiveness. Current patent research is needed to estimate the quality of patent documents. The purpose of this research is to improve the analysis and ranking of patent quality. The first step of the proposed methodology is to collect technology specific patents and to extract relevant patent quality performance indicators. The second step is to identify the key impact factors using principal component analysis. These factors are then used as the input parameters for a back-propagation neural network model. Patent transactions help judge patent quality and patents which are licensed or sold with intellectual property usage rights are considered high quality patents. This research collected 283 patents sold or licensed from the news of patent transactions and 116 patents which were unsold but belong to the technology specific domains of interest. After training the patent quality model, 36 historical patents are used to verify the performance of the trained model. The match between the analytical results and the actual trading status reached an 85% level of accuracy. Thus, the proposed patent quality methodology evaluates the quality of patents automatically and effectively as a preliminary screening solution. The approach saves domain experts valuable time targeting high value patents for R&D commercialization and mass customization of products. (C) 2011 Elsevier Ltd. All rights reserved.Item type:Item, A Semantic Based Approach for Automatic Patent Document Summarization(2008) ;Trappey, Amy J. C. ;Trappey, Charles V. ;Wu, Chun-Yi ;管理科學系Department of Management ScienceWith the rapid increase of patent documents, patient analysis becomes an important issue for creating innovative products and reducing time-to-market. A critical task for R&D groups is the analysis of existing patents and the synthesis of existing product knowledge. In order to increase knowledge visibility and sharing among R&D groups, a conconcurrent engineering approach is used to facilitate patent document summarization and sharing. The purpose of this research is to automate patent document summarization as a key analysis and knowledge management. The goal of this research is to develop a semantic-based methodology for capturing patents and to summarize this content for design team collaboration. The system automatically marks, annotates. and highlights the nodes of an ontology tree which correspond to words and provides a Visual figure summary. Patents for power hand tools and chemical mechanical polishing tools were downloaded to evaluate the automatic summarization system. For these cases, the accuracy of classification reached 93% and 92% respectively demonstrating 20% summarization improvements over previous methods.Item type:Item, An Intelligent System for Automated Binary Knowledge Document Classification and Content Analysis(2011) ;Chiang, Tzu-An ;Wu, Chun-Yi ;Trappey, Charles V. ;Trappey, Amy J. C.交大名義發表Many companies rely on patent engineers to search patent documents and offer recommendations and advice to R&D engineers. Given the increasing number of patent documents filed each year, new means to effectively and efficiently identify and manage technology specific patent documents are required. This research applies a back-propagation artificial neural network (BPANN), a hierarchical ontology technique, and a normalized term frequency (NTF) method to develop an intelligent system for binary knowledge document classification and content analysis. The intelligent system minimizes inappropriate patent document classification and reduces the effort required to search and screen patents for analysis. Finally, this paper uses the design of light emitting diode (LED) lamps as a case study to illustrate and verify the efficiency of automated binary knowledge document classification and content analysis.Item type:Item, AUTOMATIC PATENT DOCUMENT SUMMARIZATION FOR COLLABORATIVE KNOWLEDGE SYSTEMS AND SERVICES(2009-03-01) ;Trappey, Amy J. C. ;Trappey, Charles V. ;Wu, Chun-Yi ;管理科學系Department of Management ScienceEngineering and research teams often develop new products and technologies by referring to inventions described in patent databases. Efficient patent analysis builds R&D knowledge, reduces new product development time, increases market success, and reduces potential patent infringement. Thus, it is beneficial to automatically and systematically extract information from patent documents in order to improve knowledge sharing and collaboration among R&D team members. In this research, patents are summarized using a combined ontology based and TF-IDF concept clustering approach. The ontology captures the general knowledge and core meaning of patents in a given domain. Then, the proposed methodology extracts, clusters, and integrates the content of a patent to derive a summary and a cluster tree diagram of key terms. Patents from the International Patent Classification (IPC) codes B25C, B25D, B25F (categories for power hand tools) and B24B, C09G and H011 (categories for chemical mechanical polishing) are used as case studies to evaluate the compression ratio, retention ratio, and classification accuracy of the summarization results. The evaluation uses statistics to represent the summary generation and its compression ratio, the ontology based keyword extraction retention ratio, and the summary classification accuracy. The results show that the ontology based approach yields about the same compression ratio as previous non-ontology based research but yields on average an 11% improvement for the retention ratio and a 14% improvement for classification accuracy.Item type:Item, Band gap engineering and stimulated emission of ZnMgO nanowires(2006-07-03) ;Hsu, Hsu-Cheng ;Wu, Chun-Yi ;Cheng, Hsin-Ming ;Hsieh, Wen-Feng光電工程學系We report a simple method for fabricating heterostructured ZnMgO nanowires by annealing the preformed ZnO/MgO core-shell structure. Photoluminescence from the alloy nanowires shows strong near-band-edge (NBE) emission, reflecting good material quality. A blueshift of the NBE emission at room temperature after the annealing treatment is attributed to the diffusion of Mg from the shell into the core ZnO of the nanowires to form a ternary ZnMgO alloy. Band gap engineering and stimulated emissions of ZnMgO nanowires with different Mg doping concentrations are also demonstrated. (c) 2006 American Institute of Physics.Item type:Item, CLUSTERING PATENTS USING NON-EXHAUSTIVE OVERLAPS(2010-06-01) ;Trappey, Charles V. ;Trappey, Amy J. C. ;Wu, Chun-Yi ;管理科學系Department of Management SciencePatent documents are unique external sources of information that reveal the core technology underlying new inventions. Patents also serve as a strategic data source that can be mined to discover state-of-the-art technical development and subsequently help guide R&D investments. This research incorporates an ontology schema to extract and represent patent concepts. A clustering algorithm with non-exhaustive overlaps is proposed to overcome deficiencies with exhaustive clustering methods used in patent mining and technology discovery. The non-exhaustive clustering approach allows for the clustering of patent documents with overlapping technical findings and claims, a feature that enables the grouping of patents that define related key innovations. Legal advisors can use this approach to study potential cases of patent infringement or devise strategies to avoid litigation. The case study demonstrates the use of non-exhaustive overlaps algorithm by clustering US and Japan radio frequency identification (RFID) patents and by analyzing the legal implications of automated discovery of patent infringement.Item type:Item, Design and synthesis of pyridine-pyrazole-sulfonate derivatives as potential anti-HBV agents(2016) ;Chuang, Hong ;Huang, Lin-Chiang Sherlock ;Kapoor, Mohit ;Liao, Yi-JenYang, Cheng-LinHepatitis B virus (HBV) is an infectious disease, which can cause acute and chronic infections. Every year, over 7.5 million persons die due to HBV. No effective drug exists for the treatment of HBV. Thus, we designed and synthesized 16 new pyridine-pyrazole-sulfonate compounds containing pyridine-SCH2-pyrazole and pyridine-pyrazole derivatives. Their structures were characterized by H-1-NMR, C-13-NMR, IR, mass spectroscopy, and high performance liquid chromatography. All the compounds were evaluated for their anti-HBV activities and a structure-activity relationship (SAR) in HepG2 2.2.15 cells was established. We found that the pyridine-pyrazole derivatives could inhibit the HBV gene expression and viral DNA replication. Among these compounds, 2-[3-(2-nitrophenylsulfonyl)oxy-5-pyrazol-yl]pyridine 19d has shown the most potent inhibitory activity with an IC50 value of 9.19 mu M and high selectivity index, SI (TC50/IC50) of 35.46. Hence, we believe our compounds could serve as a potential lead compounds for anti-HBV drug development.Item type:Item, Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization(2018-06-01) ;Li, Yi-Shao ;Wu, Chun-Yi ;Chou, Chia-Hsin ;Liao, Chan-YuChuang, Kai-ChiA tetraethyl-orthosilicate (TEOS) capping oxide was deposited by low-pressure chemical vapor deposition (LPCVD) on a 200-nm-thick amorphous Si (a-Si) film as a heat reservoir to improve the crystallinity and surface roughness of polycrystalline silicon (poly-Si) formed by continuous-wave laser crystallization (CLC). The effects of four thicknesses of the capping oxide layer to satisfy an antireflection condition, namely, 90, 270, 450, and 630 nm, were investigated. The largest poly-Si grain size of 2.5 x 20 mu m(2) could be achieved using a capping oxide layer with an optimal thickness of 450 nm. Moreover, poly-Si nanorod (NR) thin-film transistors (TFTs) fabricated using the aforementioned technique exhibited a superior electron field-effect mobility of 1093.3 cm(2) V-1 s(-1) and an on/off current ratio of 2.53 x 10(9). (c) 2018 The Japan Society of Applied PhysicsItem type:Item, Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization(2019-01-01) ;Li, Yi-Shao ;Wu, Chun-Yi ;Liao, Chan-Yu ;Luo, Jun-DaoChuang, Kai-ChiThe crystallinity of polycrystalline germanium (poly-Ge) films were demonstrated through continuous-wave laser crystallization (CLC) with Gaussian-distribution beam profile. The different grain sizes of CLC poly-Ge were observed in their three crystallization regions, which were 2 mu m, 680 nm, and 90 nm for the central, transition, and edge regions, respectively. Furthermore, the relation between crystallinity and carrier types in these three regions of counter-doped CLC poly-Ge films were investigated. In the central and transition regions, the CLC poly-Ge films with relatively low hole concentration were easily converted to n-type poly-Ge films through a counter-doping process. In contrast, the edge region with poor crystallinity exhibited p-type behavior due to high defect-generated hole concentration. According to these material properties of counter-doped CLC poly-Ge films, the corresponding transfer characteristics of p-channel poly-Ge thin-film transistor for three crystallization regions were further investigated. Subsequently, high-performance p-channel poly-Ge thin-film transistors in the central region exhibited a superior field-effect mobility of 792.2 cm(2)/V-s.Item type:Item, High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization(2018-12-01) ;Li, Yi-Shao ;Wu, Chun-Yi ;Liao, Chan-Yu ;Huang, Wen-HsienShieh, Jia-MinThis letter reports of the fabrication of high-performance p-channel polycrystalline germanium (poly-Ge) thin-film transistors (TFTs) using continuous-wave laser crystallization (CLC). During the CLC process, the direction of crystallization matches the direction of laser scanning due to a strong temperature gradient in the melting region. This makes it possible to fabricate high-quality poly-Ge thin films with 1-D longitudinal grains as large as 2 mu m x 20 mu m. We fabricated the proposed p-channel CLC Ge TFTs with channel width of 0.7 mu m and a channel length each of 0.7 mu m. Consequently, the proposed p-channel CLC Ge TFTs with single-crystal-like channel fabricated on a longitudinal grain with biaxial tensile strain achieved a superior field-effect mobility of 1014.9 cm(2/)V-s.Item type:Item, High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation(2019-06-01) ;Li, Yi-Shao ;Liang, Hao-Hsiang ;Wu, Chun-Yi ;Huang, Wen-HsienLuo, Jun-DaoHigh-quality polycrystalline germanium (poly-Ge) films have been successfully fabricated via the continuous-wave laser crystallization (CLC) process. Grain sizes as large as 0.8 mu m were obtained for the poly-Ge films by CLC at 5.7 W. Furthermore, the source and drain dopants could then be effectively activated by green nanosecond laser annealing (GNS-LA). Consequently, n-channel CLC Ge thin-film transistors (TFTs) with a high field-effect mobility of 576 cm(2) V-1 s(-1) were demonstrated for an effective channel width of 0.86 mu m and a channel length of 0.5 mu m. It is shown that CLC combined with GNS-LA is effective for attaining high-performance n-channel poly-Ge TFTs. (c) 2019 The Japan Society of Applied PhysicsItem type:Item, Intelligent patent recommendation system for innovative design collaboration(2013-11-01) ;Trappey, Amy J. C. ;Trappey, Charles V. ;Wu, Chun-Yi ;Fan, Chin YuanLin, Yi-LiangPatents' search is increasingly critical for a company's technological advancement and sustainable marketing strategy. When most innovative designs are created collaboratively by a diverse team of researchers and technologists, patent knowledge management becomes time consuming with repeated efforts creating additional task conflicts. This research develops an intelligent recommendation methodology and system to enable timely and effective patent search prior, during, and after design collaboration to prevent potential infringement of existing intellectual property rights (IPR) and to secure new IPR for market advantage. The research develops an algorithm to dynamically search related patents in global patent databases. The system clusters users with similar patent search behaviors and, subsequently, infers new patent recommendations based on inter-cluster group member behaviors and characteristics. First, the methodology evaluates the filtered information obtained from collaborative patent searches. Second, the system clusters existing users and identifies users' neighbors based on the collaborative filtering algorithm. Using the clusters of users and their behaviors, the system recommends related patents. When collaborative design teams are planning R&D policies or searching patents and prior art claims to create new IP and prevent or settles IP legal disputes, the intelligent recommendation system identifies and recommends patents with greater efficiency and accuracy than previous systems and methods described in the literature. (C) 2013 Elsevier Ltd. All rights reserved.Item type:Item, Necking of low-bump-height solder induced by reactive wetting of solder on Au finishes in print circuit board(2013) ;Hu, Chih-Chia ;Haw, Khew Woei ;Wu, Chun-Yi ;Chen, Chih材料科學與工程學系We report a necking reliability issue in low-bump-height solder induced by reactive wetting of solder on Au finish in print circuit board. During reflow and solid state aging, the solders diffused to the Au finishes on the print circuit boards and reacted with Au to from Au-Sn compounds. Because the solder volume is very limited, this reaction took a lot of percentage of solders and caused necking of the solder joints. On the other hand, the joints without the Au layers have less necking problem. The necking will have detrimental effect on the mechanical properties of the solder joints. Therefore, it will be a serious reliability issue for flip-chip solder joints with low bump heights and microbumps in 3D IC.Item type:Item, Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires(2007-04-01) ;Pan, Ching-Ju ;Hsu, Hsu-Cheng ;Cheng, Hsin-Ming ;Wu, Chun-YiHsieh, Wen-FengZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn1-xMgxO alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn2+ ions are successfully substituted by Mg2+ ions in the ZnO lattice. In Raman-scattering studies, the change of E-2(high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510cm(-1) are presumably attributed to the Mg-related vibrational modes. (C) 2007 Elsevier Inc. All rights reserved.