Browsing by Author "Wu, Dian-Rung"

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An Energy-Recycling (ER) Technique for Reducing Power Consumption of Field Color Sequential (FCS) RGB LEDs Backlight Module
(2009)
Huang, Ming-Hsin
;
Tsai, Yueh-Chang
;
Wang, Shih-Wei
;
Wu, Dian-Rung
;
Chen, Ke-Horng
A single driving module with field color sequential (FCS) LCD technology needs to dynamically switch output voltage between 40 V for 12 series G-and B-color LEDs and 26 V for 12 series R-color LEDs at related time cluster. Thus, an energy-recycling (ER) technology is proposed to accelerate voltage settling and save compressed energy when the driving voltage is pressed from 40 V to 26 V. Only one recycling capacitor and one Schottky diode are added into the power structure of synchronous boost converter for composing the proposed ER technology. A proposed energy-recycling mode (ERM) controller is plugged into a boundary current mode (BCM) controller to control energy delivering and recycling. The proposed ER technology was fabricated by TSMC 0.25 mu m 2.5/5 V BCD process. Experimental results demonstrate fast and efficient tracking performance of driving voltage is achieved.
Solid-Duty-Control Technique for Alleviating the Right-Half-Plane Zero Effect in Continuous Conduction Mode Boost Converters
(2012-01-01)
Huang, Han-Hsiang
;
Chen, Chi-Lin
;
Wu, Dian-Rung
;
Chen, Ke-Horng
;
電控工程研究所
This paper proposes a solid-duty-control (SDC) technique for application in boost converters to maintain a constant duty value and reduce dip voltage during load transient periods. Fast transient response was also achieved because of the variable transient enhancement controller. The proposed SDC technique can provide a stable and regulated output for edge-lit light-emitting diode backlight systems. This converter was used in a 0.25-mu m CMOS process. Experimental results show that compared with a conventional design without a fast transient technique, the proposed approach yields about 30% and 80% improvement in undershoot voltage and recovery time, respectively, as load current changes from 50 to 250 mA.