Browsing by Author "Wu, Facai"

Now showing 1 - 2 of 2

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer
(2019-11-04)
Wang, Yudan
;
Wu, Facai
;
Liu, Xingqiang
;
Lin, Jun
;
Chen, Jui-Yuan
The scaling down of switching media encounters high leakage current in the traditional oxide material based memristors, resulting in high power consumption of chips. Two-dimensional (2D) materials promise an ultimate device scaling down to atomic layer thickness. Herein, black phosphorus (BP) and its self-assembly phosphorous oxide (BP) memristors are constructed, which leverages the high on/off ratio operation of oxides and low leakage current of 2D materials with high performance. The memristors exhibit reproducible and reliable switching characteristics with the on/off ratio >10(7) and data retention >10(4) s. Depending on the high reproducibility, basic "AND" and "OR" gates have been constructed on flexible substrates. Moreover, on the basis of the symmetry and linearity of conductance in the devices, the neural network simulation for supervised learning presents an online learning accuracy of 91.4%. This work opens an avenue for future flexible electronics.
Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
(2019-04-01)
Wu, Facai
;
Si, Shuyao
;
Cao, Peng
;
Wei, Wei
;
Zhao, Xiaolong
Conductive-bridging random access memory (CBRAM), dominated by conductive filament (CF) formation/rupture, has received much attention due to its simple structure and outstanding performances for nonvolatile memory, neuromorphic computing, digital logic, and analog circuit. However, the negative-SET behavior can degrade device reliability and parameter uniformity. And large RESET current increases power consumption for memory applications, By inserting 2D material, molybdenum disulfide (MoS2), for interface engineering with the device configuration of Ag/ZrO2/MoS2/Pt, the negative SET behavior is eliminated, and the RESET current is reduced simultaneously. With the ion barrier property of MoS2, the CF can probably not penetrate the MoS2 layer, thus eliminating the negative-SET behavior. And with the low thermal conductivity of MoS2, the internal temperature of the device would be relatively high at RESET, accelerating probably redox reactions. As a result, the RESET current is reduced by an order of magnitude. This interface engineering opens up a way in improving the resistive switching performances of CBRAM, and can be of great benefit to the potential applications of MoS2 in next-generation data storage.