Browsing by Author "Wu, Fan-Lei"

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Effects of buffer layers and front electrode angles on the performance of In0.16Ga0.84As solar cells
(2016-01-01)
Horng, Ray-Hua
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Wu, Fan-Lei
;
Ou, Sin-Liang
;
Kao, Yu-Cheng
;
Shih, Shan-Hui
Three buffer layers, that included 2-step, step-graded, and linear-graded layers, were designed to improve the performance of In0.16Ga0.84As solar cell. The In0.16Ga0.84As solar cells fabricated on these three buffer layers were denoted as 2S-cell, S-cell, and L-cell, respectively. The efficiencies of these three devices were 9.8%, 14.4%, and 16.3%, respectively. Obviously, the linear-graded buffer layer is most helpful to enhance the efficiency of In0.16Ga0.84As solar cell. Additionally, the front electrode angle of In0.16Ga0.84As solar cell was varied from 0 degrees to 90 degrees. When the angles were fixed at 0 degrees and 90 degrees, the devices possessed higher efficiencies of 16.3% and 16.6%, respectively.
Performance enhancement of III-V multi-junction solar cells using indium-tin-oxide electrodes
(2016-08-01)
Kao, Yu-Cheng
;
Ou, Sin-Liang
;
Wu, Fan-Lei
;
Horng, Ray-Hua
;
電機學院
InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabricated on the devices and denoted as samples A, B, and C, respectively. The thickness of ITO film is 200 nm, and its transmittance can reach 99% in the visible region. Based on the current density-voltage (J-V) measurement, the short-circuit current density (J(sc)) of samples A, B, and C are 8.13, 9.35, and 10.90 mA/cm(2), while the conversion efficiencies of these three samples are evaluated to be 15.45%, 18.14%, and 20.24%, respectively. This reveals that sample C possesses 31.0% enhancement in the conversion efficiency compared to that of sample A. Additionally, the series resistances (Rs) of samples A, B, and C are 21.43, 22.94, and 6.71 Omega-cm(2), respectively. The lowest Rs occurred in sample C can be attributed to the elimination of the lateral resistance between electrodes because this device was fabricated with the ITO-overcoated front-side electrode. In sample C, since the ITO front-side electrode can cover overall surface of the device, all regions on the sample surface can extract the electrons, leading to the highest J(sc). (C) 2016 Elsevier B.V. All rights reserved.