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Browsing by Author "Wu, Jia-Jie"

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    Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
    (2013-08-19)
    Chang, Kuan-Chang
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    Tsai, Tsung-Ming
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    Zhang, Rui
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    Chang, Ting-Chang
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    Chen, Kai-Huang
    In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.
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    Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
    (2013-04-01)
    Chang, Kuan-Chang
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    Tsai, Tsung-Ming
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    Chang, Ting-Chang
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    Wu, Hsing-Hua
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    Chen, Kai-Huang
    To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.