Browsing by Author "Wu, Lin-Kun"

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A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs
(2009-09-01)
Wang, Yueh-Hua
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Cho, Ming-Hsiang
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Wu, Lin-Kun
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電信工程研究所
;
Institute of Communications Engineering
A flexible noise de-embedding method for on-wafer microwave measurements of silicon MOSFETs is presented in this study. We use the open, short, and thru dummy structures to subtract the parasitic effects from the probe pads and interconnects of a fixtured MOS transistor. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate, drain, and source terminals of the MOSFET. The parasitics of the dangling leg in the source terminal are also modeled and taken into account in the noise de-embedding procedure. The MOS transistors and de-embedding dummy structures were fabricated in a standard CMOS process and characterized up to 20 GHz. Compared with the conventional de-embedding methods, the proposed technique is accurate and area-efficient.
A novel electrically tunable RF inductor with ultra-low power consumption
(2008-04-01)
Cho, Ming-Hsiang
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Wu, Lin-Kun
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電信工程研究所
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Institute of Communications Engineering
In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 mu W over the entire tuning range.
A Novel Feedback Network for Maximizing the Gain of a Finite-Length Leaky Wave Antenna
(2016-01-01)
Lu, Jeng-Hau
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Jou, Christina F.
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Wu, Lin-Kun
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電信工程研究所
;
Institute of Communications Engineering
This paper presents a novel feedback network to maximize the gain of a finite-length leaky wave antenna. A branch-line coupler is used to replace the original rat-race structure in order to reduce the required additional network area and avoid the design difficulties of high-impedance line sections. Design equations and detailed flows are given and an example to maximize the gain of a leaky wave antenna at 6 GHz is provided.
An Improved EEHEMT RF Noise Model for 0.25 mu m InGaP pHEMT Transistor Using Verilog-A Language
(2017-05-01)
Peng, An-Sam
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Wu, Lin-Kun
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
In this paper, an accurate experimental noise model to improve the EEHEMT nonlinear model using the Verilog-A language in Agilent ADS is presented for the first time. The present EEHEMT model adopts channel noise to model the noise behavior of pseudomorphic high electron mobility transistor (pHEMT). To enhance the accuracy of the EEHEMT noise model, we add two extra noise sources: gate shot noise and induced gate noise current. Here we demonstrate the power spectral density of the channel noise S-id and gate noise S-ig versus gate-source voltage for 0.25 mu m pHEMT devices. Additionally, the related noise source parameters, i.e., P, R, and C are presented. Finally, we compare four noise parameters between the simulation and model, and the agreement between the measurement and simulation results shows that this proposed approach is dependable and accurate.
Analytical Solutions for the Radiated Emission of Parallel Microstrip Traces
(2011-08-01)
Tseng, Bin-Chyi
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Liao, Li-Chun
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Wu, Lin-Kun
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Lung, Hui-Tsui
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傳播研究所
A closed-form expression of the unintentional electromagnetic radiation of parallel microstrip traces is proposed. Based on transmission line theory, far-field Green's function, and concept of array factor in antenna theory, analytical solutions for the electric field radiated from a pair of parallel microstrip lines are developed. Depending on the printed circuit board material, dimension parameters, and termination impedances, the frequency and angular responses of far-field radiated emission on the upper half-plane can be analyzed by the presented method. The differential-and common-mode radiated emission solutions are validated by a full-wave simulator and test board measurements in a full-anechoic chamber.
Characterization of Annular-Structure RF LDMOS Transistors Using Polyharmonic Distortion Model
(2009)
Chiu, Chia-Sung
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Chen, Kun-Ming
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Huang, Guo-Wei
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Hsiao, Chih-Hua
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Liao, Kuo-Hsiang
An annular-structure lateral-diffused metal-oxide semiconductor (LDMOS) RF transistor with polyharmonic distortion (PHD) model characterized by nonlinear vector network analyzer is described in this paper. The devices were fabricated using a 0.5 mu m LDMOS process. The DC, small-signal, and large-signal characteristics of RF LDMOS transistors with annular-structures were also studied in this work. Using the PHD model, the accuracy of intermodulation and time waveform is verified. Furthermore, the model via X-parameter shows good agreement without optimization.
Design of a Novel Microstrip Franklin Leaky-Wave Antenna Using the Eigenstate Approach
(2019-07-01)
Lu, Jeng-Hau
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Ng, Herman Jalli
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Kissinger, Dietmar
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Jou, Christina F.
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Wu, Lin-Kun
This paper presents the design of a novel periodic leaky-wave antenna (LWA) using modified microstrip Franklin unit cells. Two additional quarter-wave couple-line sections are used to allow the cell to work with the n = -2 fast-wave harmonic. It allows the use of low-epsilon(r) substrates so the designed LWA is cost-effective, can be easily integrated with radar front-end circuits, and avoids the excitation of surface waves. A novel application of eigenstate analysis leads to a simpler and more intuitive approach for the implementation of the reflection cancellation concept to eliminate open-stopband (OSB) effects. This is realized in the proposed structure with the use of a pair of interdigital fingers and different widths for the two lines forming the coupled section. A general design flow is also proposed for the design of the unit cell and LWA. Finally, a 40 cell LWA is fabricated on a Rogers 3003 substrate with epsilon(r) = 3. The measured results show that the beam scans continuously from -54 degrees to +55 degrees when frequency is varied from 54.7 to 70 GHz, and no visible OSB effect is observed near the broadside direction.
Design of Doherty Power Amplifier for Carrier-Aggregation in LTE-A Small Cell Base Station
(2016-01-01)
Li, Jian-Yu
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Hsu, Yu-Cheng
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Wu, Lin-Kun
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電信工程研究所
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Institute of Communications Engineering
The demand for higher data rate has led to the utilization of carrier aggregation technique, where the linearity and efficiency requirements of power amplifier become more stringent especially for base station. To improve efficiency around the average output power, the two-way symmetrical Doherty power amplifier with unequal input power splitting ratio is proposed. The experimental results show that the proposed Doherty architecture delivers a 39 dBm average output power with low error vector magnitude and high efficiency. Finally, an example of two LTE-Advanced component carriers (CCs) at Band 41 is used to verify the feasibility of the proposed Doherty concept in intra-band carrier aggregation.
High Reliable Doherty Power Amplifier Module for LTE Small Cell Base Station
(2017-01-01)
Hsu, Yu-Cheng
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Li, Jian-Yu
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Wu, Lin-Kun
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電信工程研究所
;
Institute of Communications Engineering
The small-cell base station requires a high linearity, high reliable and high efficiency power amplifier to enhance signal strength in a coverage region. To meet the demand, the 2.6 GHz two-way symmetrical Doherty power amplifier module which uses modularized components, enhances system stability and integrates with heat sink is proposed. The experimental results show that the proposed module delivers a power-added efficiency of 27%, a gain of 47 dB, and adjacent channel leakage ratio of below -33 dBc at an average power of 40 dBm without non-linearity compensation for the LTE signal. Finally, the model of AM-AM and AM-PM with memory effects are predicted by measurement results and it can be used to improve the linearity of the proposed power amplifier.
Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal-Oxide-Semiconductor Amplifiers
(2009-04-01)
Chiu, Chia-Sung
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Chang, Ching-Chun
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Ku, Chia-Lin
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Peng, Kang-Ming
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Jeng, Erik S.
A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal-oxide-semiconductor (CMOS) amplifier using a two-poly-two-metal (2P2M) 0.35 mu m process was designed. The gain of the CMOS amplifier and its total power consumption are 20 dB and 70 mW, respectively. The achieved phase noise of this SAW oscillator is -150 dBc/Hz at 100 kHz offset. The sensing is successfully demonstrated by a thin poly(epichlorohydrin) (PECH) polymer film on a SAW oscillator with alcohol vapor. This two-in-one sensor unit includes the SAW device and the CMOS amplifier provides designers with comprehensive model for using these components for sensor circuit fabrication. Furthermore it will be promising for future chemical and biological sensing applications. (C) 2009 The Japan Society of Applied Physics
Improvement of mode conversion for LTCC multi-layer common mode filter by twisted differential lines structure
(2006-01-01)
Tseng, Bin-Chyi
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Chen, Zhi-Hui
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Wu, Lin-Kun
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電信工程研究所
;
Institute of Communications Engineering
In high-speed differential signaling interfaces, the multi-layered common-mode filter is one of the methods used to reduce common-mode noise. But since the differential traces in multi-layer structure is not perfect symmetric. The mode conversion will occur. By using the proposed twisted differential lines architecture, the asymmetrical circuit introduced between positive and negative traces is improved, so the mode conversion can be reduced. By inserting more twisted structures in each circuit design, the suppression effectiveness of mode conversion with twisted structure is also discussed.
Miniature RF test structure for on-wafer device testing and in-line process monitoring
(2008-01-01)
Cho, Ming-Hsiang
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Lee, Ryan
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Peng, An-Sam
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Chen, David
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Yeh, Chune-Sin
In this brief, a miniature test structure for RF device characterization and process monitoring has been proposed. This new layout design can minimize the voltage drop across interconnects and can prevent capacitive coupling to devices. It consumes only 36% and 40% of the chip area of the conventional on-wafer and in-line test structures, respectively. The RF characteristics of the proposed test structure are shown to be in excellent agreement with those of the conventional ones.
Scalable short-open-interconnect S-Parameter de-embedding method for on-wafer microwave characterization of silicon MOSFETs
(2007-09-01)
Cho, Ming-Hsiang
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Wang, Yueh-Hua
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Wu, Lin-Kun
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電信工程研究所
;
Institute of Communications Engineering
In this paper, we propose an accurate and scalable S-parameter de-embedding method for RF/microwave on-wafer characterization of silicon MOSFETs. Based on cascade configurations, this method utilizes planar open, short, and thru standards to estimate the effects of surrounding parasitic networks on a MOS transistor. The bulk-shielded open and short standards are used to simulate and de-embed the probe-pad parasitics. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate and drain terminals of the MOSFET. To further eliminate the parasitics of dangling leg in source terminal of the MOSFET, we also introduce the microwave and multi-port network analysis to accomplish the two-port-to-three-port transformation for S-parameters. The MOSFET and its corresponding de-embedding standards were fabricated in a standard CMOS process and characterized up to 40 GHz. The scalability of the open, short, and thru standards is demonstrated and the performance of the proposed de-embedding procedure is validated by comparison with several de-embedding techniques.
Side Lobe Suppression of a Short Leaky-Wave Antenna by Phase Constant Tapering: Analysis and Design
(2015-08-01)
Lu, Jeng-Hau
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Huang, Jie-Huang
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Jou, Christina F.
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Wu, Lin-Kun
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傳播研究所
Uniform leaky-wave antennas (LWAs) with limited length have suffered from the presence of high-level side lobes, which could lead to the reception of unwanted noise especially when the LWA is short. This communication examines how the phase constant of a short LWA can be manipulated to achieve side lobe suppression. The tapering of the phase constant is shown to result in higher order "image patterns," which can be used advantageously for side lobe suppression. Validation of this principle is given by a cosine-shaped width-tapering profile design of a half-mode substrate-integrated waveguide (HMSIW) LWA. The measured results show that the side lobe level (SLL) of a short (1.4.0) HMSIW LWA has been suppressed to below -16 dB in the entire space wave leakage region using this tapering profile.
Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique
(2013-10-01)
Peng, An-Sam
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Cho, Ming-Hsiang
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Wang, Yueh-Hua
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Wang, Meng-Fang
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Chen, David
In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20 GHz.