Browsing by Author "Wu, Min-Ci"

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A Strategy to Synthesize Ultrahigh-N-Doped Hierarchical Carbons via Induced beta-Sheet from Silk Fibroin by In Situ Electrogelation/Electropolymerization
(2020-04-27)
Liu, Ta-Chung
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Li, Tsung-Yu
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Hung, Pei-Sung
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Liang, Chun-Wei
;
Wu, Szu-Chen
Silk fibroin (SF) is recognized for its rich nitrogen content and has been explored for its promising potential in energy storage because of its hexagonal pseudographitic structure from the direct transformation of the unique secondary protein beta-sheet peptides of carbonized SF. In this work, we proposed a novel strategy that combined with in situ electrophoresis and electrogelation of SF as well as the electropolymerization of 3,4-ethylenedioxythiophene (EDOT) for producing high-level nitrogen-doped (N-doped) carbons. A high beta-sheet content of SF can be synthesized in a three-dimensional (3D) inverse opaline skeleton via double-network microstructure (physical beta-sheet cross-linking and chemical PEDOT cross-linking) induced by the hydrophobic EDOTs. This synergistic effect regulating SF distribution and balancing the intra/intermoleeular hydrogen bonding among SF results in boosting beta-sheet contents. Herein, this 3D SF/PEDOT composite inverse opal (SPIO) exhibits a much ultrahigh-coneentrated beta-sheets (46.4%) compared to pure electrogelated SFIO with 16.4% of beta-sheets. After subsequent pyrolysis, a high-level (14.7%) N-doped pseudographitic carbon inverse opal is realized. For evaluation as a pseudocapacitor, this high-level N-doped pseudographitic carbon inverse opal shows a capacitance of 342 F g(-1) at 0.5 A g(-1) and a commendable energy density of 31.7 Wh kg(-1) at an ultrahigh power density of 25009 W kg(-1) (at 50 A g(-1)). After galvanostatic charging/discharging at 15 A g(-1) for 10000 cycles, the sample maintains an impressive capacitance retention of 89.8%.
Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays
(2020-10-01)
Chen, Jui-Yuan
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Wu, Min-Ci
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Ting, Yi-Hsin
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Lee, Wei-Che
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Yeh, Ping-Hung
Nanowire (NW) structure is superior at defining the direction of device due to its one-dimension feature. In this work, the p-n ZnO NWs were successfully synthesized, and were able to vertically grow on Ta2O5 substrate. Thus, the well-performed Au/p-n ZnO NWs/Ta2O5/Au one-diode one-memoristor device was fabricated. The p-n ZnO NWs not only exhibited excellent rectifying behavior, but also played the role of oxygen storing during filaments formation. Therefore, the low-leakage device aimed to build high-density crossbar arrays which was required for accelerating the combination of 5 G with AI in near future applications. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High-Density VRRAM Arrays
(1970-01-01)
Wu, Min-Ci
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Ting, Yi-Hsin
;
Chen, Jui-Yuan
;
Wu, Wen-Wei
;
交大名義發表
The technologies of 3D vertical architecture have made a major breakthrough in establishing high-density memory structures. Combined with an array structure, a 3D high-density vertical resistive random access memory (VRRAM) cross-point array is demonstrated to efficiently increase the device density. Though electrochemical migration (ECM) resistive random access (RRAM) has the advantage of low power consumption, the stability of the operating voltage requires further improvements due to filament expansions and deterioration. In this work, 3D-VRRAM arrays are designed. Two-layered RRAM cells, with one inert and one active sidewall electrode stacked at a cross-point, are constructed, where the thin film sidewall electrode in the VRRAM structure is beneficial for confining the expansions of the conducting filaments. Thus, the top cell (Pt/ZnO/Pt) and the bottom cell (Ag/ZnO/Pt) in the VRRAM structure, which are switched by different mechanisms, can be analyzed at the same time. The oxygen vacancy filaments in the Pt/ZnO/Pt cell and Ag filaments in the Ag/ZnO/Pt cell are verified. The 40 nm thickness sidewall electrode restricts the filament size to nanoscale, which demonstrates the stability of the operating voltages. Additionally, the 0.3 V operating voltage of Ag/ZnO/Pt ECM VRRAM demonstrates the potential of low power consumption of VRRAM arrays in future applications.
Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration
(2019-01-01)
Wu, Tzu-Yun
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Huang, Hsin-Hui
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Chu, Yueh-Hua
;
Chang, Chih-Cheng
;
Wu, Ming -Hung
This paper presents a unique opportunity of HZO ferroelectric tunnel junction (FTJ) for in-memory computing. The device operates at an extremely low sub-nA current while simultaneously achieving 50-ns fast switching, > 10(7) cycling endurance, > 10-yr retention, minimal variability, and analog state modulation. We analyze an FTJ-based deep binary neural network. It achieves better accuracy and remarkable 702, 101, and 7 x 10(4) times improvements in power, area, and energy area product efficiency compared with those using NVMs with a typical mu A cell current designed for fast memory access.