Browsing by Author "Wu, PH"

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AuBe Ohmic contacts to p-type ZnTe
(1998-12-10)
Lan, WH
;
Lin, WJ
;
Cheng, YC
;
Tai, K
;
Tasi, CM
Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe.
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
(2005-06-01)
Liu, CY
;
Wu, PH
;
Wang, A
;
Jang, WY
;
Young, JC
Sputter-deposited Cr-doped SrZrO3-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.
Growth mode in Si(100)-(2x1) epitaxy by low-temperature chemical-vapor deposition
(1998-05-15)
Wu, PH
;
Lin, DS
;
物理研究所
;
Institute of Physics
This study investigates the growth processes of Si on Si(100)-(2x1) during ultrahigh vacuum chemical vapor deposition using disilane as the source gas. The evolution of surface morphology and atomic ordering during growth at temperatures between 300 and 600 degrees C is examined in real time by high-temperature scanning tunneling microscopy. Directly imaging various growth kinetic processes, such as pure step-flow growth, double step-flow growth, two-dimensional nucleation growth, and surface passivation at different substrate temperature ranges clearly illustrates the growth mechanisms for the model chemical vapor deposition growth system and provides interesting comparison with results of Monte Carlo simulations and those of solid phase molecular-beam epitaxy. [S0163-1829(98)05619-7].
Real-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitions
(1998-02-01)
Lin, DS
;
Wu, PH
;
物理研究所
;
Institute of Physics
We report on the discovery of Si(100)-(2 x 1)-->(2 x n)-->c(4 x 4) structural phase transitions. Annealing the Si(100)-(2 x 1) surface between 590 and 700 degrees C for some hours causes dimer vacancies to increase and nucleate into chains, ultimately forming the (2 x n) structure. After further annealing. c(4 x 4) areas appear grow. and finally cover the entire surface. Experimental results raise the possibility not only that c(4 x 4) is a stable low-temperature structure of Si(100), but that (2 x 1) is a high-temperature phase stabilized at room temperature owing to its kinetic limitations. (C) 1998 Elsevier Science B.V.
Real-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitions
(1998-02-01)
Lin, DS
;
Wu, PH
;
物理研究所
;
Institute of Physics
We report on the discovery of Si(100)-(2 x 1)-->(2 x n)-->c(4 x 4) structural phase transitions. Annealing the Si(100)-(2 x 1) surface between 590 and 700 degrees C for some hours causes dimer vacancies to increase and nucleate into chains, ultimately forming the (2 x n) structure. After further annealing. c(4 x 4) areas appear grow. and finally cover the entire surface. Experimental results raise the possibility not only that c(4 x 4) is a stable low-temperature structure of Si(100), but that (2 x 1) is a high-temperature phase stabilized at room temperature owing to its kinetic limitations. (C) 1998 Elsevier Science B.V.