Browsing by Author "Wu, Pei-Si"
Now showing 1 - 2 of 2
- Results Per Page
- Sort Options
Item type:Item, A 10-Gb/s, 1.24 pJ/bit, Burst-Mode Clock and Data Recovery With Jitter Suppression(2015-03-01) ;Su, Ming-Chiuan ;Chen, Wei-Zen ;Wu, Pei-Si ;Chen, Yu-HsiangLee, Chao-ChengA burst mode clock and data recovery (BMCDR) circuit for 10 Gbps passive optical network (10G-PON) is presented. The proposed BMCDR is reconfigurable between data gating mode and phase tracking mode to achieve instantaneously phase-locked with jitter suppression capability. Incorporating selectively gating VCO (SGVCO), the BMCDR operates at 1/5-rate and accomplishes 1:5 demultiplexing with a high energy efficiency of 1.24 pJ/bit. With a 4 MHz, 0.22UI(pp) jitter stressed input data at 10 Gbps, the recovered clock jitter at 2 GHz is 2.94 ps(rms). The prototype is fabricated using 55 nm CMOS technology. The core area is 0.03 mm(2) only. It dissipates 12.4 mW from 1 V supply.Item type:Item, A 10Gbps, 1.24pJ/bit, Burst-Mode Clock and Data Recovery with Jitter Suppression(2013-01-01) ;Su, Ming-Chiuan ;Chen, Wei-Zen ;Wu, Pei-Si ;Chen, Yu-HsianLee, Chao-ChengA 10Gbps, 1/5-rate burst mode clock and data recovery (BMCDR) circuit is proposed. The BMCDR is reconfigurable between data gating mode and phase tracking mode to achieve instantaneous phase-locking with jitter suppression for 10 GPON. Incorporating a 1/5-rate CDR with 1: 5 demultiplexer, it achieves a high energy efficiency of 1.24pJ/bit. With a 4MHz, 0.22UI(pp) input data jitter, the recovered clock jitter at 2GHz is 2.94ps(rms). The prototype chip is fabricated in UMC 55nm CMOS technology. Chip size is 200x150 mu m(2).