Browsing by Author "Wu, Po-Yi"

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0.13-mu M CMOS Q-BAND LEVELED-LO SUBHARMONIC MIXER WITH INJECTION-LOCKED FREQUENCY-DIVIDER QUADRATURE GENERATOR
(2009-11-01)
Su, Jen-Yi
;
Meng, Chinchun
;
Wu, Po-Yi
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
In this article, a 40-GHz subharmonic Gilbert down-conversion mixer with an accurate quadrature local oscillator (LO) input is demonstrated using a standard 0.13-mu m CMOS technology. The quadrature-output frequency divider is realized by injection-locked oscillators and is used at the LO port to replace conventional RC-CR polyphase filters at higher frequencies. Furthermore, the proper Marchand balun at all RF stage is suitable for the standard Si-based process to generate precisely balanced signals despite the substrate loss. The measured conversion gat In is 4 dB at 40 GHz. The IP(1dB) IIP(3) of - 7 dBm and 2 dBm, respectively, tire achieved. The measured 3-dB RF bandwidth is very broad and about 12-GHz bandwidth when the 10-MHz IF frequency is fixed. The die Size is about I mm X I mm. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2663-2665, 2009; Published online in Wiley InterScience (www.interscience.wiley.com), DOI 10.1002/mop.24714
15 GHz Wideband CMOS Gilbert Up-Converter With Stacked Spiral-CPS Phase-Inverter Rat-Race Coupler at RF Port
(2013)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Wu, Po-Yi
;
Huang, Guo-wei
;
電機資訊學士班
A miniaturized phase-inverter rat-race and its wideband Gilbert up-converter is demonstrated in 0.13-mu m CMOS technology. The common-mode LO leakage can be absorbed by the isolated port of the rat-race coupler while the rate-race employed at RF port to combine the mixer differential output. A phase-inverter rat-race coupler with a stacked spiral-shape coplanar stripline (CPS) by multi-layer metals can highly reduce the chip size. Finally, the experimental results of up-converter shows the 1-dB conversion gain and 15 GHz RF bandwidth. The IF-to-RF isolation is about 50 dB and LO-to-RF isolation is about 23 dB, respectively.
40-GHz CMOS Subharmonic Gilbert Mixer With Quadrature Injection-Locked Frequency Divider
(2008)
Su, Jen-Yi
;
Meng, Chinchun
;
Wu, Po-Yi
;
Huang, Guo-Wei
;
電信工程研究所
Adjusting Color Temperature of Electroluminescence from White Light-Emitting Electrochemical Cells by Laser-Scanned Annealing of Nanoparticles
(2017-01-01)
Lee, Hsiao-Chin
;
Chiang, Chien-Ming Fan
;
Wu, Po-Yi
;
Yao, Yung-Chi
;
Sarma, Monima
Color temperature of electroluminescence from white light-emitting electrochemical cells can be adjusted by locally laser-scanned thermal annealing on a semi-continuous thin Ag film embedded between indium tin oxide anode and glass substrate. The proposed technique offers programmable versatility to control white electroluminescence and is compatible with display manufacturing technologies.
K-band CMOS sub-harmonic resistive mixer with a miniature Marchand balun on lossy silicon substrate
(2008-01-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wu, Po-Yi
;
Tsung, Kuan-Chang
;
電信工程研究所
A K-band sub-harmonically pumped resistive mixer is demonstrated using standard 0.13 mu m CMOS technology. A miniature Marchand Balun is integrated with the resistive mixer to generate equal amplitude and out-of-phase signals for mixer's local oscillation (LO) port directly on the lossy silicon substrate. The sub-harmonic resistive mixer with the integrated Marchand balun has conversion loss of 11-12 dB at f(IF) = 100 MHz and P-LO = 7 dBm for RF frequencies from 18 to 26 GHz. The LO-RF and LO-IF isolations are approximately 30 and 33 dB, respectively.
Ka/Ku-Band pHEMT Gilbert Mixers With Polyphase and Coupled-Line Quadrature Generators
(2009-05-01)
Su, Jen-Yi
;
Tseng, Sheng-Che
;
Meng, Chinchun
;
Wu, Po-Yi
;
Lee, Yueh-Ting
In this paper, three kinds of Ka/Ku-band Gilbert mixers are demonstrated using 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor technology. Thanks to the semiinsulating GaAs substrate, microwave passive components have a low-loss feature, and polyphase filters work up to higher frequencies. Highly accurate tantalum-nitride thin-film resistors utilized in polyphase filters result in perfect quadrature operation. Therefore, our proposed single-sideband up-converter operates at 15 GHz with a 63-dB sideband rejection ratio, and another 34-GHz in-phase/quadrature (I/Q) subharmonic down-converter reaches <0.4-dB magnitude and < 1 degrees phase errors. More than 50-dB local oscillator (LO) leakage suppression is achieved in the I/Q subharmonic mixer. On the other hand, a 40-GHz stacked-LO subharmonic mixer with a novel compensation technique is also proposed and demonstrated to improve LO speed and reduce the amount of transistors, as compared to previous work.
Laser-Scanned Programmable Color Temperature of Electroluminescence from White Light-Emitting Electrochemical Cells
(2016-11-23)
Lee, Hsiao-Chin
;
Chiang, Chien-Ming Fan
;
Wu, Po-Yi
;
Yao, Yung-Chi
;
Sarma, Monima
Recently, the control of correlated color temperature (CCT) of artificial solid-state white-light sources starts to attract more attention since CTs affect human physiology and health profoundly. In this work, we proposed and demonstrated a method that can widely tune the CCTs of electroluminescence (EL) from white-light-emitting electrochemical cells (LECs) by employing plasmonic filters. These integrated on-chip plasmonic filters are composed of semicontinuous thin Ag film or Ag nanoparticles (NPs) both included in the indium tin oxide anode contact, which have different characteristics of plasmonic resonant absorptions that can tune the EL spectra of white LECs. The CCTs of EL from white LECs integrated with semicontinuous thin Ag film and randomly distributed Ag NPs are 5778 and 2350 K, respectively. A commercially available laser scanning system was used to locally thermal anneal the semicontinuous thin Ag film to form the randomly distributed Ag NPs on the scanned areas. Hence, these two kinds of filters can be integrated on the same chip of white LEC, giving more freedom to control the CCTs of white EL and more potential applications. In addition, the laser scanning system used here is quite often used in display manufactures so that our proposed method can be immediately adopted by the light-emitting diode industry.
Q-Band pHEMT and mHEMT Subharmonic Gilbert Upconversion Mixers
(2009-06-01)
Su, Jen-Yi
;
Meng, Chinchun
;
Wu, Po-Yi
;
電信工程研究所
;
Institute of Communications Engineering
This letter makes a comparison between Q-band 0.15 mu m pseudomorphic high electron mobility transistor (pHEMT) and metamorphic high electron mobility transistor (mHEMT) stacked-LO subharmonic upconversion mixers in terms of gain, isolation and linearity. In general, a 0.15 mu m mHEMT device has a higher transconductance and cutoff frequency than a 0.15 mu m pHEMT does. Thus, the conversion gain of the mHEMT is higher than that of the pHEMT in the active Gilbert mixer design. The Q-band stacked-LO subharmonic upconversion mixers using the pHEMT and mHEMT technologies have conversion gain of -7.1 dB and -0.2 dB, respectively. The pHEMT upconversion mixer has an OIP(3) of -12 dBm and an OP(1 dB) of -24 dBm, while the mHEMT one shows a 4 dB improvement on linearity for the difference between the OIP(3) and OP(1 dB). Both the chip sizes are the same at 1.3 mm x 0.9 mm.