Browsing by Author "Wu, RG"

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Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLK
(2001-06-01)
Wu, ZC
;
Shiung, ZW
;
Wu, RG
;
Liu, YL
;
Wu, WH
This work investigates the dielectric and barrier properties of two species of organic aromatic low dielectric constant (low-k) polymers, namely, FLARE and SiLK. Experimental results indicate that both of the low-k polymers exhibit acceptable thermal stability with respect to a thermal annealing at 400 degreesC for 8 h in an N-2 ambient. Moreover, they show a good dielectric barrier property against Cu penetration under bias-temperature stressing (BTS) at 150 degreesC with an applied effective field of 0.8 MV/cm. Nevertheless, an anomalous instability of the capacitance-voltage curve was observed for the first time under BTS. This finding is explained by the proposed model of stress induced dielectric polarization charges within these organic aromatic polymers. The polarization instability may seriously degrade the long term reliability of circuit operations. (C) 2001 The Electrochemical Society.
Electrical reliability issues of integrating low-K dielectrics with Cu metallization
(2000)
Wu, ZC
;
Shiung, ZW
;
Wang, CC
;
Fang, KL
;
Wu, RG
Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 similar to 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.
Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
(1999-11-01)
Wu, ZC
;
Wang, CC
;
Wu, RG
;
Liu, YL
;
Chen, PS
This work investigates the integration of very thin sputtered Ta and reactively sputtered TaN barriers with Cu and a low-dielectric-constant (low-K) layer of poly(arylene ether) (PAE-2). It is found that Cu readily penetrates into PAE-2 and degrades its dielectric strength in metal-insulator semiconductor capacitors of Cu/PAE-2/Si structure at temperatures as low as 200 degrees C. Very thin Ta and TaN films of 25 nm thickness sandwiched between Cu and the low-K dielectric served as effective barriers during a 30 min thermal annealing at temperatures up to 400 and 450 degrees C, respectively. We propose a failure mechanism of outgassing induced gaseous stress of PAE-2 under the Ta film to explain its premature barrier degradation. The TaN barrier did not suffer from this gaseous stress problem because of its stronger adhesion to PAE-2 than that of Ta to PAE-2, leading to a better long-term reliability. (C) 1999 The Electrochemical Society. S0013-4651(99)04-046-X. All rights reserved.