Browsing by Author "Wu, Shi-Yin"

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Photo-polymerization of photocurable resins containing polyhedral oligomeric silsesquioxane methacrylate
(2011-12-15)
Lin, Ho-May
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Wu, Shi-Yin
;
Chang, Feng-Chih
;
Yen, Ying-Chieh
;
應用化學系
Photocurable resins, bisphenol A propoxylate glycerolate diacrylate (BPA-PGDA, containing two hydroxyl) and bisphenol A propoxylate diacrylate (BPA-PDA), with fixed photoinitiator (Irgacure 907) concentration and various contents of methacrylisobutyl polyhedral oligomeric silsesquioxane (MI-POSS) were prepared and characterized by FTIR spectroscopy, scanning electron microscope and differential photocalorimetry. The MI-POSS molecules form crystals or aggregated particles in the cured resin matrix. The BPA-PGDA series photocurable resins show higher viscosity and lower photo-polymerization reactivity than the BPA-PDA series resins. The photo-polymerization rate and conversion of BPA-PGDA series are improved with increasing MI-POSS content. On the contrary, the photo-polymerization behavior of BPA-PDA series photocurable resins remains nearly unchanged by the addition of MI-POSS. Hydrogen-bonding interaction between the hydroxyl of BPA-PGDA and the siloxane of MI-POSS tends to attract and concentrate these acrylate double bonds around MI-POSS particles and thus enhances the photo-polymerization rate and conversion. (C) 2011 Elsevier B.V. All rights reserved.
Polyhedral oligomeric silsesquioxane containing copolymers for negative-type photoresists
(2006-09-22)
Lin, Ho-May
;
Wu, Shi-Yin
;
Huang, Pei-Yuan
;
Huang, Chih-Feng
;
Kuo, Shiao-Wei
A series of methacrylate copolymers containing polyhedral oligomeric silsesquioxane (POSS) was synthesized from the free radical copolymerization of methacrylic acid, methyl methacrylate, and isobutyl propylmethacryl polyhedral oligosilsesquioxanes, and then were modified with glycidyl methacrylate to serve as negative-type photoresists. The UV/Vis spectroscopy reveals that the incorporation of POSS moiety into the copolymer results in a slight decrease in transparency from 99 to 92.5% (at wavelength = 365 nm). The photosensitivity in terms of resist sensitivity (D-n(0.5)), contrast (gamma), and photopolymerization rate are significantly increased with increase in the POSS content. In addition, the induction time is reduced from 0.520 to 0.515 min after incorporating the POSS unit based on photo-DSC analyses. These observed results can be rationalized as due to hydrogen bonding interactions between siloxane and hydroxyl groups in copolymers which tend to attract the methacrylate double bonds surrounding POSS units to crosslink, thereby enhancing the photopolymerization rate and sensitivity. We further evaluate the lithographic property of a photoresist under a collimated exposure.