Browsing by Author "Wu, T. -L."

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A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node
(2018-01-01)
Tang, Y. -T
;
Su, C. -J.
;
Wang, Y. -S.
;
Kao, K. -H.
;
Wu, T. -L.
The impact of a realistic representation of gate-oxide granularity on negative-capacitance (NC) FETs at sub-5nm node is studied by a newly developed thermodynamic energy model based on the first principle calculation (FPC). For the first time, the calculation fully couples the Landau-Khalatnikov (L-K) equation with grain-size effect equation in NC-FETs. It explains the experimental results in phase transition and reveals excellent immunity against depolarization in ferroelectric (FE) layer owing to dopant concentration and stress in thin films. A sub-5nm node (L-G=10nm) NC-FET with thin FE layer (T-FE similar to 2nm) is integrated to achieve low subthreshold slope (SS) of 52mV/dec via a 1.9GPa-tensor stressed interfacial layer (IL) and 12% Zr-doped HfO2.