Browsing by Author "Wu, T. H."

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Ge/Al bilayer thin film for optical write-once media
(2007-01-01)
Wu, T. H.
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Kuo, P. C.
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Chen, Jung-Po
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Wu, Chih-Yuan
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Yen, Po-Fu
Ge/Al bilayer thin films are prepared by magnetron sputtering. Thermal analysis shows that the phase change of the film occurs at 275 degrees C. Contrasts at 650 rim and 405 nm wavelength are 71.4% and 31.1% respectively.
High-gain high-isolation CMFB stacked-LO subharmonic Gilbert mixer using SiGe BiCMOS technology
(2007-05-01)
Wu, T. H.
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Meng, C. C.
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Huang, G. W.
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電信工程研究所
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Institute of Communications Engineering
A 5.2-GHz SiGe BiCMOS stacked-LO-stage CMFB (common made feedback) subharmonic mixer is demonstrated in this article. The stacked-LO-stage and the active loads are used to improve the 2LO-RF isolation and the conversion gain, respectively. The SiGe mixer includes five levels of transistors stacked together at the supply voltage of 3.3 V because of the low knee-voltage characteristic of the SiGe HBTs (heterojunction bipolar transistors). The mixer demonstrated achieves 23 dB conversion gain and -78 dB 2LO-RF isolation. (c) 2007 Wiley Periodicals, Inc.
Microstructure and recording mechanism of Ge/Au bilayer media for write-once optical disc
(2007-04-09)
Wu, T. H.
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Kuo, P. C.
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Fang, Yen-Hsiang
;
Chen, Jung-Po
;
Yen, Po-Fu
The recording mechanism of Ge/Au bilayer and its dynamic tests for write-once blue laser high density DVD (HD DVD) are investigated. It is found that Ge2Au3 phase is nucleated between amorphous Ge and crystalline Au layer after room temperature deposition. Crystallization of Ge/Au interface layer at 170-190 degrees C is induced by the nucleated Ge2Au3 sites at the interface, the bilayer structure is further heated to 200-450 degrees C. After heating above 320 degrees C, crystallized Ge are segregated at the grain boundary. The dynamic test results show that this Ge/Au bilayer films can be applied to 1x-2x HD DVD-R. (c) 2007 American Institute of Physics.