Browsing by Author "Wu, WL"

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Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process
(2004)
Ker, MD
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Wu, WL
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Chang, CY
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電機學院
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College of Electrical and Computer Engineering
Different electrostatic discharge (ESD) devices in a 0.35-mum silicon germanium (SiGe) RF BiCMOS process are characterized in detail by transmission line pulse (TLP) generator and ESD simulator for on-chip ESD protection design. The test structures of diodes with different p-n junctions and the silicon-germanium heterojunction bipolar transistors (HBTs) with different layout parameters have been drawn for investigating their ESD robustness. The human-body-model (HBM) ESD robustness of SiGe HBTs with the optional low-voltage (LV), ligh-voltage (HV), and high-speed (HS) implantations has been measured and compared in the experimental test chips.
New construction for transversal design
(2006-05-01)
Du, DZ
;
Hwang, FK
;
Wu, WL
;
Znati, T
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應用數學系
The study of gene functions requires the development of a DNA library of high quality through much of testing and screening. Pooling design is a mathematical tool to reduce the number of tests for DNA library screening. The transversal design is a special type of pooling design, which is good in implementation. In this paper, we present a new construction for transversal designs. We will also extend our construction to the error-tolerant case.
X-ray reflectivity and FTIR measurements of N-2 plasma effects on the density profile of hydrogen silsesquioxane thin films
(2001-10-01)
Lee, HJ
;
Lin, EK
;
Wu, WL
;
Fanconi, BM
;
Lan, JK
The density depth profile and chemical bond structure of hydrogen silsesquioxane (HSQ) thin films treated with an N-2 plasma with varying power and exposure time were measured using specular X-ray reflectivity (SXR) and Fourier transform infrared (FTIR) spectroscopy. The SXR data indicated that the density profile of an untreated HSQ film is not uniform. At least four layers with different electron densities were required to fit the SXR data. For HSQ films treated with either increasing plasma power or plasma exposure time, the film roughness increased and a densified layer was observed at the film/air interface. The thickness of the densified layer increased with both plasma power and plasma exposure time. In the FTIR spectra of the plasma-treated films, the intensities of the Si-O peaks due to the network structure and the Si-OH peak due to water absorption increased and the intensities of the Si-H peaks decreased. The FTIR data show that the plasma converts the HSQ structure into a SiO2-like structure and are consistent with the densification observed in the SXR measurements. In general, the HSQ film is more sensitive to increasing plasma power than to increasing plasma exposure time. (C) 2001 The Electrochemical Society.