Browsing by Author "Wu, Y. C."

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Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer
(2010)
Chen, C. C.
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Wu, Y. C.
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Tung, T. F.
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Wu, H. Y.
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材料科學與工程學系
Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.
High-performance polycrystalline silicon thin-film transistors with oxidenitride-oxide gate dielectric and multiple nanowire channels
(2006-11-25)
Chen, Shih-Ching
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Chang, Ting-Chang
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Liu, Po-Tsun
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Wu, Y. C.
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Tsai, C. C.
This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect. (c) 2006 Elsevier B.V. All rights reserved.
High-power picoseconds 355 nm laser by third harmonic generation based on CsB3O5 crystal
(2007-07-01)
Guo, L.
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Wang, G. L.
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Zhang, H. B.
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Cui, D. F.
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Wu, Y. C.
We report on the high average power third harmonic generation (THG) of a mode-locked picosecond laser in a CsB3O5 (CBO) crystal. The picosecond laser beam at 1064 nm is produced by a home-made 30 W master oscillator power-amplifier (MOPA) Nd:YVO4 laser system. The maximum THG output at 355 nm is up to 5.4 W. We also investigate the phase matching angle at different temperatures. During high power operation, the temperature of the CBO crystal is set at a high temperature of more than 100 degrees C. The THG system has shown a fine long-term stability for more than two months of operation.
SPDT GaAs switches with copper metallized interconnects
(2007-02-01)
Wu, Y. C.
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Chang, E. Y.
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Lin, Y. C.
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Hsu, H. T.
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Chen, S. H.
Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) single-pole-double-throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. In comparison with the An metallized switches, the Cu metallized SPDT switches exhibited comparable performance with insertion loss of I Ss than 0.5 dB, isolation larger than 35 dB and the input power for one dB compression (input P-1 dB) of 27 dBm at 2.5 GHz. These switches were annealed at 250 degrees for 20 It for thermal stability test and showed no degradation of the dc characteristics after the annealing. Also, after 144 h of high temperature storage life (HTSL) environment test, these switches still remained excellent and reliable radio frequency (RF) characteristics. It is successfully demonstrated for the first time that the copper metallization using Pt as the diffusion barrier could be applied to the GaAs monolithic microwave integrated circuits switch fabrication with good RF performance and reliability.