Browsing by Author "Wu, YR"

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A dopant-related defect in Te-doped AlInP
(1999-08-01)
Wu, YR
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Sung, WJ
;
Wen, TC
;
Lee, SC
;
Lee, WI
A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect.
Gamma-ray induced deep electron traps in GaInP
(2001-09-01)
Sung, WJ
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Liu, TY
;
Yang, SL
;
Huang, KF
;
Tseng, TY
Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples. trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.
Majority- and minority-carrier traps in Te-doped AlInP
(1999-01-11)
Wu, YR
;
Sung, WJ
;
Lee, WI
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電子物理學系
;
友訊交大聯合研發中心
The properties of deep levels found in Te-doped AlInP grown by metal-organic chemical vapor deposition have been studied. By using pn-junction structure, both minority- and majority-carrier traps can be observed. Two deep levels are found in Te-doped AlInP: one majority-carrier trap and one minority-carrier trap. The activation energies of majority- and minority-carrier traps are 0.24+/-0.05 and 0.25+/-0.03 eV, respectively. The majority-carrier trap is uniformly distributed, indicating that this level belongs to some kind of bulk defect. (C) 1999 American Institute of Physics. [S0003-6951(99)05202-X].
Mg-related deep levels in AlInP
(1999-07-01)
Wu, YR
;
Sung, WJ
;
Lee, SC
;
Li, TJ
;
Lee, WI
The properties of deep levels found in Mg-doped AlInP, grown by metal-organic chemical vapor deposition, have been studied. Two distinct levels, labeled E1 and E2, were observed, with the activation energy of 0.19 and 0.514 eV, respectively. From distribution profiles measured on trap E1, E2 and Mg-dopant, all three concentration profiles have similar behaviors. The concentration increases gradually from the interface of pn junction. Furthermore, both trap E1 and E2 concentration increase with elevating Mg-dopant concentration Thus, it seems that these deep levels originate from Mg-related defects.
Phosphorus vacancy as a deep level in AlInP layers
(2000-06-15)
Sung, WJ
;
Wu, YR
;
Lee, SC
;
Wen, TC
;
Li, TJ
Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.