Browsing by Author "Wuen, WS"

Now showing 1 - 6 of 6

A CMOS low-noise amplifier for ultra wideband wireless applications
(2005-11-01)
Chou, MF
;
Wuen, WS
;
Wu, CC
;
Wen, KA
;
Chang, CY
A CMOS low noise amplifier (LNA) for low-power ultrawideband (UWB) wireless applications is presented. To achieve low power consumption and wide operating bandwidth, the proposed LNA employing stagger tuning technique consists of two stacked common-source stages with different resonant frequencies. This work is implemented in 0.18-mu m CMOS process and shows a 2.4-9.4-GHz bandwidth. The amplifier provides a maximum forward gain (S-21) of 10.9 dB while drawing 7.1 mW from a 1.8-V supply. A noise figure as low as 4.1 dB and an IIP3 of -3.5 dBm have been demonstrated.
A dual-band switchable 5-GHz CMOS low noise amplifier for wireless multimedia applications
(2003-06-01)
Wuen, WS
;
Wen, KA
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The paper presents a dual-band switchable low noise amplifier implemented in 0.25-mum CMOS technology for 5GHz wireless multimedia applications. The high-speed wireless multimedia applications call for broadband design techniques for RF circuits. Instead of using conventional broadband techniques not well suitable for CMOS implementation, a dual-band switchable load is proposed for broadband LNA design. The dual-band switchable load enables the LNA operate at the lower or the upper band at 5-GHz band by a 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23dBm in both frequency bands. It draws 9.5 mA from 2.5 V supply. The power gain remains larger than 16 dB as temperature varies from -5 to 65degreesC.
A low noise CMOS current folded mixer for direct conversion receivers
(2004-06-01)
Wuen, WS
;
Wen, KA
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A current folded mixer achieving low l/f noise for low power direct conversion receivers is proposed. The proposed mixer topology decouples the design tradeoffs between noise figure, conversion gain and third order intermodulation distortion. Comparisons with the conventional current-reuse injection topology, the current folded mixer with l/f noise minimized shows significant improvements. Experimental design on 2.4-GHz band and with 0.18-mum CMOS technology has revealed the advantages of the newly proposed topology.
A low power CMOS low noise amplifier for ultra-wideband wireless applications
(2005)
Wu, CC
;
Chou, MF
;
Wuen, WS
;
Wen, KA
;
電子工程學系及電子研究所
A CMOS low noise amplifier (LNA) for low-power ultra-wideband (UNVB) wireless applications is presented. To achieve low power consumption and wide operating bandwidth, the proposed LNA employing stagger tuning technique consists of two stacked common-source stages with different resonance frequencies. This work is implemented in 0.18-mu m CMOS process and shows a 2.6-9.2-GRz bandwidth. The amplifier provides a maximum forward gain (S(21)) of 10.9 dB while drawing 7.1 mW from a 1.8-V supply. A noise figure as low as 3.5 dB and an IIP3 of -5.1 dBm have been demonstrated. In this paper, design optimization for the power-constrained stacked amplifiers in wide bandwidth applications is also presented.
CMOS RFIC: Application to wireless transceiver design
(2000-02-01)
Wen, KA
;
Wuen, WS
;
Huang, GW
;
Chen, LP
;
Chen, KY
There is increasing interest using CMOS circuits for highly integrated high frequency wireless telecommunications systems. This paper reviews recent works in transceiver architectures, circuits and devices technology for CMOS RFIC application. A number of practical problems those must be resolved in CMOS RFIC design are also discussed.
Dual-band switchable low noise amplifier for 5-GHz wireless LAN radio receivers
(2002)
Wuen, WS
;
Wen, KA
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The paper presents a dual-band switchable low noise amplifier implemented in 0.25-mum CMOS technology for 5-GHz wireless local area network (WLAN) applications. Equipped with a PMOS capacitor together with the inductive load, the LNA is able to operate at the lower or the upper band at 5-GHz by 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23 dBm in both frequency bands. The LNA draws 9.5 mA from 2.5 V supply.