Browsing by Author "Xu, Dan"

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POC: Paphiopedilum Orchid Classifier
(2015)
Arwatchananukul, Sujitra
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Charoenkwan, Phasit
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Xu, Dan
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生物資訊及系統生物研究所
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Institude of Bioinformatics and Systems Biology
Paphiopedilum Orchid Flowers (POF) are colorful wildflowers and also endangered plants since they bloom only one time per year. There are many species with a similar appearance, which makes it difficult and laborious to classify. Thus, we propose a novel Paphiopedilum Orchid Classifier (POC) based on Neural Network, utilizing the Color and Segmentation-based Fractal Texture Analysis (SFTA) features. In the classification of 11 POF species, POC achieved 97.64% of 10-fold cross validation accuracy. Besides, we also propose a new POF dataset consisting of 100 samples for each species and illustrated the prediction performance of several renowned classifiers such as Naive Bayes, K-nearest and Decision Tree. According to research result, we hope that POC can assists botanists to classify POF for further breed selection and adaptation.
Soluble InP and GaP Nanowires: Self-Seeded, Solution-Liquid-Solid Synthesis and Electrical Properties
(2009)
Liu, Zhoping
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Sun, Kai
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Jian, Wen-Bin
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Xu, Dan
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Lin, Yen-Fu
We demonstrate a facile method for self-seeded, solution-liquid-solid growth of soluble InP and GaP nanowires at it temperature of approximate to 300 degrees C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios oil wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III-V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage (I-V) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications.