Browsing by Author "Xue, Kan-Hao"

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Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing
(2018-10-01)
Wang, Zhuo-Rui
;
Li, Yi
;
Su, Yu-Ting
;
Zhou, Ya-Xiong
;
Cheng, Long
In-memory computing architecture is an emerging revolutionary computing paradigm that can break the von Neumann bottleneck. Computing methodology and circuit codesign using the CMOS compatible 1T1R resistive random access memory (RRAM) integration structure is presented in this paper. Functionally complete Boolean logic and arithmetic functions are experimentally demonstrated. With a single 40-nm CMOS process 1T1R unit, each of the 16 binary logics can be realized in two logic steps with an additional readout step for cascading, which shows functional reconfiguration and low computational complexity. Up to 10(7) cycles of NAND and XOR logic operations are performed to validate the correctness and reliability. Moreover, several fundamental adder circuits are designed and experimentally demonstrated in 1T1R devices as the proof of concept of the 1T1R computing architecture. The adders proposed in this paper include a ripple-carry adder and its optimized design and a carry-select adder, which all show promising advantages in nonvolatility, computation speed, and circuit area. This paper reports the most complex yet efficient RRAM-based 8-bit addition function experimentally so far and lays a solid foundation for constructing the future in-memory computing architecture.
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory
(2018-06-01)
Zheng, Hao-Xuan
;
Chang, Ting-Chang
;
Xue, Kan-Hao
;
Su, Yu-Ting
;
Wu, Cheng-Hsien
This letter introduces a method of using bipolarity bias voltages in the forming process to effectively reduce the forming voltage of a one-transistor and one-resistance random access memory device. A bipolar incremental-step-pulse programming process is applied, and a complete operation pulse for the forming process is described. This method reduces forming voltage without any cost to the device performance, and the device maintains good reliability. The likely physical mechanism of this bipolar operation is also presented based on the measured electrical characteristics.