Browsing by Author "YANG, CK"

Now showing 1 - 7 of 7

CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
(1995-12-01)
YANG, CK
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The electrical characteristics of top-gate thin-film transistors (TFT's) fabricated on the nitrogen-implanted polysilicon of the doses ranging from 2 x 10(12)-2 x 10(14) ions/cm(2) were investigated in this work, The experimental results showed that nitrogen implanted into polysilicon followed by an 850 degrees C 1 h annealing step had some passivation effect and this effect was much enhanced by a following H-2-plasma treatment. The threshold voltages, subthreshold swings, ON-OFF current ratios, and field effect mobilities of both n-channel and p-channel TFT's were all improved, Moreover, the hot-carrier reliability was also improved, A donor effect of the nitrogen in polysilicon was also found which affected the overall passivation effect on the p-channel TFT's.
COLOR IMAGE COMPRESSION BY MOMENT-PRESERVING AND BLOCK TRUNCATION CODING TECHNIQUES
(1994)
YANG, CK
;
LIN, JC
;
TSAI, WH
;
資訊工程學系
;
Department of Computer Science
COLOR IMAGE SHARPENING BY MOMENT-PRESERVING TECHNIQUE
(1995-09-01)
YANG, CK
;
WU, TC
;
LIN, JC
;
TSAI, WH
;
資訊工程學系
A new approach to sharpening color images using the moment-preserving technique is proposed, An input image is processed pixel by pixel. By preserving some color moments of the n x n neighborhood of each pixel, analytic formulas are derived to compute two sets of (R, G, B) tristimulus values, and one of them is assigned to the pixel as the sharpening result. Cases with one or more uniform color components in the neighborhood are also treated. The proposed method preserves spatial details, and requires little memory and small computational load, The proposed sharpening operation can also be applied iteratively to the input image to get better sharpening effect. Experimental results show that the proposed approach is effective for color image sharpening.
ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
(1995-06-01)
YANG, CK
;
LEE, CL
;
LEI, TF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This letter reports that passivation effects of the H-2-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si3N4 film On their gate-dielectrics. Compared to the conventional devices with only the SiO2 gate dielectric, the TFT's with Si3N4 have much more improvement on their subthreshold swing and field-effect mobility after H-2-plasma treatment.
IMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS
(1994)
YANG, CK
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
RADIATION EFFECTS ON N-CHANNEL POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
(1995-12-04)
YANG, CK
;
LEE, CL
;
LEI, TF
;
CHERN, HN
;
電子工程學系及電子研究所
The radiation effect on the n-channel polycrystalline silicon (polysilicon) thin-him transistors has been investigated. It is found that for an unhydrogenated device, the irradiation of Co-60 With a total dose of 1 Mrads caused a negative threshold-voltage (V-th) shift and a slight subthreshold-swing (S) degradation, while for a hydrogenated n-channel device, the same irradiation results in a positive V-th Shift and a serious S degradation. It is also found that the radiation hardness of the hydrogenated devices can be improved somewhat by a simple irradiation-then-hydrogenation treatment. (C) 1995 American Institute of Physics.
THE COMBINED EFFECTS OF LOW-PRESSURE NH3-ANNEALING AND H-2 PLASMA HYDROGENATION ON POLYSILICON THIN-FILM TRANSISTORS
(1994-10-01)
YANG, CK
;
LEI, TF
;
LEE, CL
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The low pressure NH3-annealing and the H-2. plasma hydrogenation were jointly used to improve the characteristics of polysilicon thin-film transistors (TFT's). It was found that the TFT's after applying the above treatments achieved better subthreshold swings, threshold voltages, field effect mobilities, off currents, and reliability. It is believed that the improvement was due to the gate oxynitride formation and the H-2-plasma had a better passivation effect on the oxynitride.