Browsing by Author "YANG Hao-I"

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GATE OXIDE BREAKDOWN-WITHSTANDING POWER SWITCH STRUCTURE
(2012-04-12)
YANG Hao-I
;
Chuang Ching-Te
;
Hwang Wei
The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.
STATIC RANDOM ACCESS MEMORY WITH RIPPLE BIT LINES/SEARCH LINES FOR IMROVING CURRENT LEAKAGE/VARIATION TOLERANCE AND DENSITY/PERFORMANCE
(2014-03-20)
CHUANG Ching-Te
;
YANG Hao-I
;
LU Chien-Yu
;
CHEN Chien-Hen
;
CHANG Chi-Shin
A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.