Browsing by Author "YARN, KF"
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Item type:Item, A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY(1989-12-20) ;WANG, YH ;YARN, KF ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS(1994-11-01) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringIn this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, V(S), and holding voltage, V(H), was also investigated.Item type:Item, A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY(1990-06-01) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, A TRISTATE SWITCH USING TRIANGULAR BARRIERS(1990-02-01) ;WANG, YH ;YARN, KF ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR(1990-08-20) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES(1990-05-01) ;WANG, YH ;YARN, KF ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES(1994-03-01) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringWe report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n--delta(p+)-n--p+-n--delta(p+)-n--n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of approximately 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac.Item type:Item, GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR(1989-09-01) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY(1990-05-01) ;WANG, YH ;YARN, KF ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR(1990-12-01) ;YARN, KF ;CHANG, CY ;WANG, YH ;WANG, RL電控工程研究所This letter describes a power GaAs bipolar-unipolar transition negative differential transistor (BUNDR) using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V(BE) = 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.Item type:Item, NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY(1989-03-20) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY(1990-06-01) ;YARN, KF ;WANG, YH ;CHANG, CY ;電控工程研究所Institute of Electrical and Control EngineeringItem type:Item, VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE(1990-06-01) ;YARN, KF ;WANG, YH ;CHANG, CY ;CHANG, CS電控工程研究所