Browsing by Author "YEN, MS"

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ENHANCED O2 PLASMA STRIPPING OF P+ AND SI+ IMPLANTED NEGATIVE RESIST BY H2 PLASMA PRETREATMENT
(1993-04-01)
LOONG, WA
;
YEN, MS
;
WANG, FC
;
HSU, BY
;
LIU, YL
Hydrogen plasma pretreatments (100 W, 20 sccm, 0.2 torr, 40 approximately 115-degrees-C, 10 approximately 30 min) of Si+, P+, B+ and As+ implanted (100 keV, 1x10(15) ion/cm2) Hunt HR-200 negative resists to the oxygen plasma stripping (100 W, 40 sccm, 0.45 torr, 40 approximately 115-degrees-C) were studied in this report. The results showed that only the resistance to oxygen plasma stripping of Si+ and P+ implanted HR-200 were greatly reduced at the conditions in this study. The activation energies Eact of Si+ and P+ implanted HR-200 by oxygen plasma stripping can be both brought down from approximately 1.3 to approximately 0.85 kcal/mole by hydrogen plasma pretreatment. The FTIR, SEM and ESCA analyses indicated the decreasing of carbonization layers by hydrogen plasma pretreatments.
ENHANCED OXYGEN PLASMA STRIPPING OF P+-IMPLANTED NEGATIVE RESIST BY HYDROGEN PLASMA PRETREATMENT - TEMPERATURE EFFECTS
(1991-06-06)
LOONG, WA
;
YEN, MS
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Hydrogen plasma pretreatment (90-115-degrees-C, 10-30 min) of P+-implanted (100 keV, 1 x 10(15) ion/cm2) HR-200 negative resist greatly reduces its resistance to oxygen plasma stripping at about 40-degrees-C. At lower temperature for hydrogen plasma pretreatment (down to 40-degrees-C) and higher temperature for oxygen plasma stripping (up to 115-degrees-C), the reduction to resistance of oxygen plasma stripping by hydrogen plasma pretreatment is much smaller.