Browsing by Author "YEW, TR"

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EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C
(1995-01-09)
LIU, CC
;
LEE, CY
;
CHENG, KL
;
CHENG, HC
;
YEW, TR
MICROCRYSTALLINE beta-SIC GROWTH ON SI BY ECR-CVD AT 500 degrees C
(1995)
CHENG, KL
;
LIU, CC
;
CHENG, HC
;
LEE, CY
;
YEW, TR
MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
(1995-10-01)
CHENG, KL
;
CHENG, HC
;
LIU, CC
;
LEE, C
;
YEW, TR
The characteristics of microcrystalline silicon carbide (mu c-SiC) films deposited using an electron cyclotron resonance chemical vapor deposition system at low temperatures have been investigated. The effect of microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan-view transmission electron microscopy, and the plasmon loss peaks in X-ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500 degrees C. The SiC crystallinity improves monotonically with MW power. The amount of incorporated carbon atoms in the grown films increases with MW power up to the concentration of 50% at 1500 W. The dependence of the surface morphology and the mean roughness of the films on MW power is examined using the contact mode atomic force microscopy.
MICROCRYSTALLINE SIC FILMS GROWN BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURES
(1995-10-01)
CHENG, KL
;
CHENG, HC
;
LIU, CC
;
LEE, C
;
YEW, TR
The characteristics of microcrystalline silicon carbide (mu c-SiC) films deposited using an electron cyclotron resonance chemical vapor deposition system at low temperatures have been investigated. The effect of microwave (MW) power on the SiC crystallinity is studied. According to the results of Fourier transform infrared absorption spectra, plan-view transmission electron microscopy, and the plasmon loss peaks in X-ray photoelectron spectroscopy, Si-C bonds form when the MW power is above 500 W for deposition at 500 degrees C. The SiC crystallinity improves monotonically with MW power. The amount of incorporated carbon atoms in the grown films increases with MW power up to the concentration of 50% at 1500 W. The dependence of the surface morphology and the mean roughness of the films on MW power is examined using the contact mode atomic force microscopy.
VERY-LOW TEMPERATURE DEPOSITION OF POLYCRYSTALLINE SI FILMS FABRICATED BY HYDROGEN DILUTION WITH ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
(1995-02-01)
WANG, KC
;
CHENG, KL
;
JIANG, YL
;
YEW, TR
;
HWANG, HL
Characteristics of polycrystalline silicon films deposited both on SiO2 and Coming 7059 glass substrates are presented in this paper. The silicon films were deposited by a hydrogen dilution method using electron cyclotron resonance chemical vapor deposition at 250 degrees C without any thermal or laser annealing. The hydrogen dilution ratio was between 90% and 99%. The geometric configuration and surface morphology of polycrystalline silicon films were studied by atomic force microscopy. The largest grain size of the deposited silicon films; identified by plan-view transmission electron microscopy dark-field imaging, was about 1 mu m. From Raman spectrum, the crystalline fraction of polycrystalline silicon films was identified to be nearly 100%. The polycrystalline silicon was found to be preferentially [111]- and [110]-oriented, from the X-ray diffraction pattern.