Browsing by Author "Yang, CD"

Now showing 1 - 3 of 3

Enhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arrays
(1996-12-15)
Ku, TK
;
Chen, SH
;
Yang, CD
;
She, NJ
;
Tarntair, FG
A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma chemical vapor deposition (MPCVD) has been developed to improve the characteristics of electron field emission from the pure Si tips. A uniform and smooth coating morphology for the diamond-clad Si tips have been achieved. Electron emission currents of diamond-clad tips are much higher than those of pure Si tips. Such great improvement is attributed to the lowering of the effective work function in the diamond-clad tips. The effects of phosphorus- and boron-doped diamond-clad Si tips have been also studied in comparison with the undoped ones. The current-voltage characteristics of the undoped diamond-clad tips were further enhanced by the in-situ doping of phosphorus or boron due to a higher electron supplement. Moreover, the P-doped diamond-clad tips show a better field emission performance as compared to the B-doped ones. This difference is surmised to be associated with the higher electron conductivity and defect densities of P-doped diamond films.
Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays
(1996-05-01)
Ku, TK
;
Chen, SH
;
Yang, CD
;
She, NJ
;
Wang, CC
Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function, Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones, After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities.
Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.
(1996)
Ku, TK
;
Chen, SH
;
Yang, CD
;
She, NJ
;
Tarntair, FG
In order to take the advantages of diamond and carbon coating on flat-panel display, unscratched sharp Si microtip arrays have been carburized based on the bias enhanced nucleation (BEN) and low-pressure MPCVD deposition to obtain an ultra-sharp carburized Si FEAs. The tip radii of these BEN-carburized Si tips can be reduced below 300 Angstrom under low deposition temperature (<550 degrees C). Furthermore, some BEN-carburized samples were further deposited by normal diamond growth conditions to form the ultra-sharp DLC-clad Si FEAs with enhanced emission ability.