Browsing by Author "Yang, Chih-Chung"

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The Research on Developing the Expert System of Road Pavement Maintaining Knowledge Condensed Revised Version
(2016-01-01)
Yang, Chih-Chung
;
Lin, Jyh-Dong
;
Ho, Min-Che
;
Zhan, Yi-Chuan
;
交大名義發表
Due to strong effect of Climate Change, the roads in Taiwan are not only prone to frailty, but also getting harsher to maintain in the recent year. Besides, the adversities such as the heavy traffic and the frequent road diggings challenged the maintaining engineers of the pavement management as well. While dealing with complicated situation involving the various decisions of the different authorities concerned in the engineering operations, the inexpert engineers depending on the technique and the experience merely passed verbally in the departments seem to be helpless. In the view of the situations, it is necessary to build an effective consulting system for engineers to breakthrough the predicament of pavement management. In this research, we have collected the methods of maintaining domestic urban roads and organized the models suiting for maintaining them. Then, build a semantic expert system about pavement maintenance knowledge providing appropriate maintaining policies by SWI-Prolog based on the information we have collected and organized. Last, we demonstrated the fruits how the expert system uplifted the pavement maintaining level.
The study of compensative structure assisted convex and concave corner structures etching by Inductively Coupled Plasma-Reactive Ion Etch (ICP-RIE)
(2015)
Lin, Yu-Hsin
;
Cheng, Yuan-Chieh
;
Chu, Nien-Nan
;
Hsu, Wensyang
;
Tang, Yu-Hsiang
In this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5 mu m. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.