Browsing by Author "Yang, Chin-Hao"

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Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.
(2006-09-01)
Yang, Wen-Luh
;
Chao, Tien-Sheng
;
Chen, Shine-China
;
Yang, Chin-Hao
;
Peng, Wu-Chin
A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (< 10(-9) A) and a high breakdown voltage (> 25 MV/cm(2)). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.
V - and W - Band Substrate Integrated Waveguide (SIW) Mechanical Switch
(2018-06-01)
Wei, Shih-Chiang
;
Yang, Chin-Hao
;
Chen, Yen-Cheng
;
Chen, Ting-An
;
Chang, Chi-Yang
This paper presents high-isolation single-polesingle-throw (SPST) and single-pole-double-throw (SPDT) substrate integrated waveguide (SIW) mechanical switches in V-and W-bands. Four via holes with the proposed ring-andcross etching patterns on the top side are placed in the middle of SIW path to block or pass the waves. As the ring-and-cross etching patterns being short-circuited, the via holes block the waves just like stockades do, in other words, turning the switch to OFF mode. And the ring-and-cross etching pattern makes the via holes invisible, turning the switch to ON mode. The V-and W-band SIW SPST and SPDT switches are designed and fabricated. The switches show the measured performances of better than 45-dB isolation for SPST and better than 50-dB isolation for SPDT, for V-band operation, and a better than 50-dB isolation for both SPST and SPDT for W-band operation.