Browsing by Author "Yang, DY"

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Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown
(2006)
Huang, SY
;
Chen, KM
;
Huang, GW
;
Yang, DY
;
Chang, CY
Effects of hot carrier stress (HCS) and oxide breakdown (OBD) on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that under the same dc degradation, the cut-off frequency (f(Tau)) and maximum oscillation frequency (f(max)) suffered mode seriously by OBD than by HCS. Minimum noise figure (NFmin) is one of the main concerns in RF characteristics. NFmin increased dramatically after OBD than that after HCS due to the added gate leakage paths. Those effects can be clarified and explained by using a constructed explained small-signal model.
Impact of hot carrier stress on RF power characteristics of MOSFETs
(2005)
Huang, SY
;
Chen, KM
;
Huang, GW
;
Yang, DY
;
Chang, CY
This paper investigates hot-carrier (HQ effects on the RF power and linearity characteristics of MOS transistors using load-pull measurement. We found that the RF power characteristics are affected by the HC stress, and the linearity of MOS transistors is clearly degraded after HC stress at constant gate voltage measurement. However, at high gate voltage bias, the HC-induced power degradation is much reduced compared with that under low gate voltage regimes. In addition, HC effects on linearity can be softened by biasing the transistor at constant drain currents. These experimental observations can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility degradation coefficient under HC stress.