Browsing by Author "Yang, F. M."

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Memory characteristics of Co nanocrystal memory device with HfO(2) as blocking oxide
(2007-03-26)
Yang, F. M.
;
Chang, T. C.
;
Liu, P. T.
;
Yeh, P. H.
;
Yu, Y. C.
In this letter, the Co nanocrystals using SiO(2) and HfO(2) as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide
(2007-03-26)
Yang, F. M.
;
Chang, T. C.
;
Liu, P. T.
;
Yeh, P. H.
;
Yu, Y. C.
In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5 V, the memory window was estimated to similar to 1 V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 10(6) write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry. (c) 2007 American Institute of Physics.
Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application
(2007-05-28)
Yang, F. M.
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Chang, T. C.
;
Liu, P. T.
;
Chen, U. S.
;
Yeh, P. H.
A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9x10(12)/cm(2), respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 10(6) write/erase cycles. (C) 2007 American Institute of Physics.
Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application
(2007-12-03)
Yang, F. M.
;
Chang, T. C.
;
Liu, Po-Tsun
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Yeh, Y. H.
;
Yu, Y. C.
In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry. (C) 2007 Published by Elsevier B.V.
Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices
(2007-05-21)
Yang, F. M.
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Chang, T. C.
;
Liu, P. T.
;
Yeh, P. H.
;
Chen, U. S.
The nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. (c) 2007 American Institute of Physics.