Browsing by Author "Yang, FM"

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Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectric
(2005-08-01)
Yang, FM
;
Chang, TC
;
Liu, PT
;
Chen, CW
;
Tai, YH
in this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (alpha-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into alpha-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample. (c) 2005 Elsevier B.V. All rights reserved.
Memory effect of oxide/oxygen-incorporated silicon carbide/oxide sandwiched structure
(2005)
Chang, TC
;
Liu, PT
;
Yan, ST
;
Yang, FM
;
Sze, SM
The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC :O)/oxide sandwiched structure were investigated. The memory window is decreased with the increasing of the oxygen content in the SiC :O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC :O film, which is attributed to the high barrier height induced by electron trapping in the SiC :O film. (C) 2005 The Electrochemical Society.
Memory effect of oxide/SiC : O/oxide sandwiched structures
(2004-03-22)
Chang, TC
;
Yan, ST
;
Yang, FM
;
Liu, PT
;
Sze, SM
The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC:O film, which is attributed to the high barrier height induced by electron trapping in the SiC:O film. (C) 2004 American Institute of Physics.
Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
(2004-06-07)
Chang, TC
;
Yan, ST
;
Yang, FM
;
Liu, PT
;
Sze, SM