Browsing by Author "Yang, H. P."

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Demonstration of slow light via population oscillation in quantum dot VCSEL
(2007)
Xuan, R.
;
Chi, J. Y.
;
Peng, P. C.
;
Yang, H. P.
;
Chao, C. L.
Experimental data for slow light delay in a quantum dot VCSEL are analyzed with a Fabry-Perot analysis. The analysis can fit the observed wavelength dependence of the delay. It can also explain that the maximum delay occur at a wavelength detuned from the resonant frequency.
Modeling of slow light in vertical cavity surface emission lasers
(2007)
Chou, C. -S.
;
Lee, R. -K.
;
Peng, P. C.
;
Kuo, H. C.
;
Lin, G.
We develop a model for the slow light in the Vertical Cavity Surface Emission Lasers (VCSELs), with the combinations of cavity and the population pulsation effects. The dependences of pumping power, injection current and wavelength detuning for the group delays are demonstrated theoretically and experimentally. Up to 65 ps group delays and up to 10 GHz modulation frequency can be achieved in the room temperature at the wavelength of 1.3 mu m. Based on the experimental parameters of quantum dot VCSEL structures, we show that the resonance effect of laser cavity plays a significant role to enhance the group delays.
Tunable optical group delay in quantum dot vertical-cavity surface-emitting laser at 10 GHz
(2006-08-31)
Peng, P. C.
;
Lin, C. T.
;
Kuo, H. C.
;
Lin, G.
;
Tsai, W. K.
This investigation experimentally demonstrates tunable optical group delay in a 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL). The QD VCSEL is fabricated on a GaAs substrate. Tunable delays are achieved by varying the bias currents, and the maximum delay of 42 ps at 10 GHz has been demonstrated at room temperature.
Tunable slow light device using quantum dot semiconductor laser
(2006-12-25)
Peng, P. C.
;
Lin, C. T.
;
Kuo, H. C.
;
Tsai, W. K.
;
Liu, J. N.
This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 mu m fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system. (C) 2006 Optical Society of America.