Browsing by Author "Yang, HM"
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Item type:Item, A Bezier curve-based approach to shape description for Chinese calligraphy characters(2001) ;Yang, HM ;Lu, JJ ;Lee, HJ ;資訊工程學系Department of Computer ScienceIn this paper, we propose a method to vectorize Chinese characters in calligraphy documents. Our system can prevent tire zigzag phenomena when the characters are enlarged. The system contains two modules: contour segment extraction and description. In the former, high curvature points on contours are detected as corner points, which divide the contour into several segments. In the latter, a contour segment can be described either by a straight line or a cubic Bezier curve. according to relations between the contour segment and the Bezier curve, control points are adjusted to fit the contour segment better. When the curve fitness cost is small enough, the shape is described well. The processing time of our curve fitting is about five seconds per A4 image, which has 4488 contour segments. Experimental results demonstrate that our system is efficient and promising.Item type:Item, High-resolution MOS magnetic sensor with thin oxide in standard submicron CMOS process(1996-10-01) ;Yang, HM ;Huang, YC ;Lei, TF ;Lee, CLChao, SCIn this paper, new results obtained with an NMOS magnetic-field sensor made by an industrial 0.8 mu m CMOS process are presented. The major disadvantage of MOS magnetic sensors, a larger noise, can be overcome by the submicron CMOS process with 19 nm gate oxide, The device with W/L=60 mu m/50 mu m biased at saturation region has a resolution of 150 nT (Hz)(-1/2) at 1 kHz and 400 nT (Hz)(-1/2) at 100 Hz, respectively. Even when the device size is scaled down to W/L=6 mu m/5 mu m, the resolution still has the value of 1.5 mu T (Hz)(-1/2) at 1 kHz. The dependence of sensitivity and current-related sensitivity for various bias conditions is discussed in detail and a simple model to explain these trends is established.Item type:Item, MOS magnetic current sensor based on standard CMOS process(1997-03-27) ;Yang, HM ;Lei, TF ;Huang, YC ;Lee, CL電子工程學系及電子研究所A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.Item type:Item, MOS magnetic current sensor based on standard CMOS process(1997-03-27) ;Yang, HM ;Lei, TF ;Huang, YC ;Lee, CL電子工程學系及電子研究所A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A.