Browsing by Author "Yang, HP"

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1.3 mu m quantum dot vertical-cavity surface-emitting laser with external light injection
(2005-10-27)
Peng, PC
;
Chang, YH
;
Kuo, HC
;
Tsai, WK
;
Lin, G
A 1.3 mu m quantum dot vertical-cavity surface-emitting laser (QD VCSEL) with external light injection is presented, having been experimentally demonstrated. The QD VCSEL is fabricated on GaAs substrate. The 3 dB frequency response of the QD VCSEL based on the TO-Can package is enhanced from the free-running 1.75 to 7.44 GHz with the light injection technique.
10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation
(2004-08-01)
Lai, FI
;
Hsueh, TH
;
Chang, YH
;
Kuo, HC
;
Wang, SC
High-speed single transverse mode 850 nm vertical cavity surface emitting lasers (VCSELs) with large emission aperture with a diameter of 8 Am were fabricated. These VCSELs exhibit good performance with threshold currents of 1.5 mA, a single transverse mode emission within the full operational range and a maximum output power of 3.8 mW. The large aperture is advantageous to these VCSELs with a smaller dynamic resistance (60 Omega) than that of conventional single-mode VCSEL. These single-mode VCSELs also demonstrate superior high-speed performance up to 10 Gb s(-1).
Control the transverse mode of vertical cavity surface emitting lasers by anti-reflection coating
(2001)
Chiou, SW
;
Lee, CP
;
Yang, HP
;
Sung, CP
;
電子工程學系及電子研究所
We have successfully developed a selective surface coating technique to control the modal behavior of the ion-implanted vertical cavity surface emitting laser. Using selective deposition of germanium coating by lift-off process, we could spatially control the threshold gain condition of the VCSEL to support the single transverse mode. The threshold current is 7 mA and single transverse mode operation is maintained up to 1 mW. The method is simple and nondestructive compared to other techniques.
Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
(2005)
Kuo, HC
;
Chang, YH
;
Chang, YA
;
Tseng, KF
;
Laih, LH
In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of similar to 0.4 mA, and slope efficiencies of similar to 0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA)(1/2) are demonstrated. We have accumulated life test data up to 1000 hours at 70 degrees C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.
High speed (> 13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer
(2005-06-01)
Chang, YH
;
Kuo, HC
;
Lai, FI
;
Tzeng, KF
;
Yu, HC
Improved oxide-implanted VCSELs utilising the tapered oxide layer are presented. The VCSELs exhibited similar static performance, but superior modulation bandwidth up to 13.2 GHz, compared with conventional blunt oxide VCSELs. The damping rate was reduced two times in the tapered oxide VCSEL and therefore enhanced the maximal modulation bandwidth. A very clean eye was demonstrated from the improved VCSEL with a rising time of 26 ps, falling time of 40 ps and jitter of less than 20 ps, operating at 10 Gbit/s with 6 mA bias and 6 dB extinction ratio. A comprehensive small signal measurement and analysis was conducted. Based on the equivalent circuit model, the extrinsic bandwidth limitation of the tapered oxide VCSELs was determined.
High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance
(2004-07-01)
Chang, YH
;
Lai, FI
;
Lu, CY
;
Kuo, HC
;
Yu, HC
This study reports the high-speed performance of 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitance. The parasitic capacitance of VCSELs was reduced using additional proton implantation. The small signal modulation bandwidth which was restricted by electric parasitic capacitance expanded from 2.3 GHz to 9 GHz after proton implantation. The reflection coefficient showed that the electric parasitic pole exceeded 20 GHz. An eye diagram of VCSEL with reduced parasitic capacitance operating at 10 Gps with 6 mA bias and 6 dB extinction ratio showed a very clean eye with a jitter of less than 20 ps.
Improvement of high-speed oxide-confined vertical-cavity surface-emitting lasers
(2004-04-01)
Yu, HC
;
Chang, SJ
;
Su, YK
;
Sung, CP
;
Yang, HP
High-speed vertical-cavity surface-emitting lasers that could be modulated up to 10 Giga-bit-per-second (Gbps) were accomplished by using additional proton implantation to reduce the parasitic capacitance. The eye diagram of the implanted device shows a noticeable improvement when compared with those devices without implantation. In contrast to previous reports, moreover, the output power-current-voltage (L-I-V) characteristics of the fabricated devices ill this study show excellent consistency between before and after implantation. The high-temperature lifetime of devices fabricated with a similar process has already exceeded 8100 h up to the present day.
Mode control of vertical-cavity surface-emitting lasers by germanium coating
(2001-02-01)
Chiou, SW
;
Lin, G
;
Lee, CP
;
Yang, HP
;
Sung, CP
We have successfully developed a selective surface coating technique to control the modal behavior of the ion-implanted vertical-cavity surface-emitting laser (VCSEL). With selective deposition of a germanium coating by the lift-off process, we could spatially control the threshold gain condition of the VCSEL to support the single transverse mode. The threshold current is 7 mA and single transverse mode operation is maintained up to I mW. The method is simple and nondestructive compared with other techniques.
Single mode output (SMSR > 40 dB) utilizing photonic crystal on proton-implanted vertical-cavity surface-emitting lasers
(2005)
Lai, FI
;
Chang, YH
;
Yang, HP
;
Yu, HC
;
Kuo, HC
Proton-implanted photonic crystal VCSELs were demonstrated with power > 1 mW and SMSR > 40 dB. The relative intensity noise spectra show the resonant frequency reaches to 7.8 GHz: with a D factor of 4.72 GHz/(mA)(1/2).
Single-mode monolithic quantum-dot VCSEL in 1.3 mu m with sidemode suppression ratio over 30 dB
(2006-03-01)
Chang, YH
;
Peng, PC
;
Tsai, WK
;
Lin, G
;
Lai, F
We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single-mode operation was obtained with a sidemode suppression ratio of > 30 dB. The modulation bandwidth and eye diagram in 2.5 Gb/s was also presented.