Browsing by Author "Yang, J. -C."

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Domain Wall Conductivity in La-Doped BiFeO(3)
(2010-11-05)
Seidel, J.
;
Maksymovych, P.
;
Batra, Y.
;
Katan, A.
;
Yang, S. -Y.
The transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO(3)) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.
Domain Wall Conductivity in La-Doped BiFeO3
(2010-11-05)
Seidel, J.
;
Maksymovych, P.
;
Batra, Y.
;
Katan, A.
;
Yang, S. -Y.
The transport physics of domain wall conductivity in La-doped bismuth ferrite (BiFeO3) has been probed using variable temperature conducting atomic force microscopy and piezoresponse force microscopy in samples with arrays of domain walls in the as-grown state. Nanoscale current measurements are investigated as a function of bias and temperature and are shown to be consistent with distinct electronic properties at the domain walls leading to changes in the observed local conductivity. Our observation is well described within a band picture of the observed electronic conduction. Finally, we demonstrate an additional degree of control of the wall conductivity through chemical doping with oxygen vacancies, thus influencing the local conductive state.
Domain Wall Geometry Controls Conduction in Ferroelectrics
(2012-11-01)
Vasudevan, R. K.
;
Morozovska, A. N.
;
Eliseev, E. A.
;
Britson, J.
;
Yang, J. -C.
A new paradigm of domain wall. nanoelectronics has emerged recently, in which the domain wall in a ferroic is itself an active device element The ability to spatially. modulate the ferroic order parameter within a single domain wall allows the physical properties to be tailored at will and hence opens vastly unexplored device possibilities: Here, we demonstrate via ambient and ultrahigh-vacuum (UHV) scanning probe microscopy (SPM) measurements in bismuth ferrite that the conductivity of the domain walls can be modulated by up to 500% in the spatial dimension as a function of domain wall curvature. Landau-Ginzburg-Devonshire calculations reveal the conduction is a.. result of carriers or vacancies migrating to neutralize the charge at the farmed interface. Phase field modeling indicates that anisotropic potential distributions can occur even for initially uncharged walls, from polarization dynamics mediated by elastic effects. These results are the first proof of concept for modulation of charge as a function of domain wall geometry by a proximal probe, thereby expanding potential applications for oxide ferroics in future nanoscale electronics.
Unraveling the origins of electromechanical response in mixed-phase bismuth ferrite
(2013-07-08)
Vasudevan, R. K.
;
Okatan, M. B.
;
Liu, Y. Y.
;
Jesse, S.
;
Yang, J. -C.
The origin of giant electromechanical response in a mixed-phase rhombohedral-tetragonal BiFeO3 thin film is probed using subcoercive scanning probe microscopy based multiple-harmonic measurements. Significant contributions to the strain arise from a second-order harmonic response localized at the phase boundaries. Strain and dissipation data, backed by thermodynamic calculations, suggest that the source of the enhanced electromechanical response is the motion of phase boundaries. These findings elucidate the key role of labile phase boundaries, both natural and artificial, in achieving thin films with giant electromechanical properties.