Browsing by Author "Yang, J. Y."

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Comparing the performances of Pentacene based TFTs use MWCNTs and Pd/Ti as source and drain
(2007)
Chang, C. H.
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Chien, C. H.
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Yang, J. Y.
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate
(2007-02-19)
Hsieh, Y. C.
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Chang, E. Y.
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Luo, G. L.
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Pilkuhn, M. H.
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Tang, S. S.
Si+ pre-ion-implantation combined with a GexSi1-x metamorphic buffer structure for the growth of Ge layer on Si substrate is proposed. Enhanced strain relaxation of the GexSi1-x metamorphic buffer layer on Si substrate was achieved due to the introduction of the point defects by heavy dose Si+ pre-ion-implantation. Because of the strain relaxation enhancement and the interface blocking of the dislocations in the GexSi1-x metamorphic buffer structure, the total thickness of the buffer layers was only 0.45 mu m. No cross-hatch pattern was observed on the Ge surface and the dislocation density for the top Ge film was only 7.6x10(6) cm(-2). (c) 2007 American Institute of Physics.