Browsing by Author "Yang, K"

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Effects of ammonia plasma treatment on the surface characteristics of carbon fibers
(2006-02-24)
Wen, HC
;
Yang, K
;
Ou, KL
;
Wu, WF
;
Chou, CP
Carbon fibers were grown from cobalt catalysts with larger size (> 100 nm), and the size distribution can be controlled by pretreatment. Pretreated cobalt catalytic-layers were observed as islands, which can enhance the growth of carbon fibers. The carbon fibers were treated by ammonia plasma in a PECVD system. High-energy ammonia plasma not only can cause damage but also adsorb on carbon fibers. The ammonia plasma treatment resulted in the etching effect. It is also observed that the more treatment time, the more disorder in structures of carbon fibers. The N-H functional groups were found on the surfaces of ammonia plasma treated carbon fibers and this observation can be further investigated to develop chemical sensor application. (c) 2005 Elsevier B.V. All rights reserved.
Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect
(2004-01-30)
Chen, KW
;
Wang, YL
;
Liu, CP
;
Yang, K
;
Chang, L
According to rapid development of CMP technology, the difference of polishing methods would be applied for copper damascene interconnect. These methods include conventional rotary, linear, oscillation platform. The advantages of these platform would highlighted in uniformity control, stability of removal rate, planarization efficiency, throughput promotion, lower cost of ownership, even dishing and erosion effect integrated with slurry. This paper presented our experience to compare the uniformity, removal rate and planarization efficiency of Cu-CMP between various polishing platforms. In convection, the rotary or oscillation platform would be usually applied in oxide and tungsten CMP, due to the robust air-back carrier and rigid platen to polish the wafer, which performs the good reliability on wafer-to-wafer thickness and endpoint detection. However, the linear polisher is made of the air-bearing moving belt and self-rotated carrier and would provide the wider uniformity and planarization control window than others. In addition,, the simulation model would explain the difference from mechanic design and wafer moving paths between various polishing techniques. Hence, the trade-off advantage and application between various platforms would be compensated and integrated with slurry, conditioners and coming thickness profile from copper plating. It can achieve the optimization of Cu-CMP process. (C) 2003 Elsevier B.V. All rights reserved.