Browsing by Author "Yang, KH"

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Carbon nanotubes grown using cobalt silicide as catalyst and hydrogen pretreatment
(2005-12-01)
Wen, HC
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Yang, KH
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Ou, KL
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Wu, WF
;
Luo, RC
Cobalt catalytic-layers 25 mn were deposited by sputtering on silicon substrates. At the pretreatments, hydrogen plasma was conducted for 4-16 min at 600 degrees C in a MPCVD system. Pretreated samples were characterized using SEM and AFM. Surface morphologies of catalytic-layers were changed after hydrogen plasma pretreatments. The cobalt layers became discontinuous and some nanoparticles were formed. With pretreatments for a long time, nanoparticles tended to agglomerate to reduce surface energy and larger nanoparticles were observed. It is believed that the optimum pretreatment condition for the growth of carbon nanotubes could be achieved because relatively high growth failure and nanofibers (> 100 nm) was observed for shorter and longer than 12 min pretreatment, respectively. It is found that the hydrogen pretreatment is a crucial step for the making of nucleation sites in the synthesis of carbon nanotubes using cobalt silicide as catalyst on Si substrates. After the pretreatment, mixture gases of hydrogen and methane were then flowed into the chamber for 12 min, samples were characterized using SEM, TEM and Raman spectrum. Carbon atoms were adsorbed on the islands of catalysts, and then diffused into the edge of nanotubes. Cobalt silicides were formed due to high processing temperature, and cobalt atoms tended to diffuse and stay on the silicon substrates, which enhance carbon nanotubes to grow under the root growth mechanism. (c) 2005 Elsevier B.V. All rights reserved.
Crosstalk studies of in-plane switching mode under different pixel- and common-electrode configurations
(2004-04-01)
Lin, JS
;
Yang, KH
;
Chen, SH
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光電工程學系
;
Department of Photonics
In thin-film-transistor liquid-crystal display (TFT-LCD), particularly pixel-electrode configuration of in-plane switching (IPS) mode, crosstalk caused by capacitive coupling between pixel electrodes and data lines could result in image degradation. We derived the capacitive coupling ratio (CCR) of the IPS cell and analyzed the CCR of three conventional TFT-IPS pixel- and common-electrode structures to quantity the crosstalk properties. The effect of coupling voltage on electro-optics characteristics has been investigated. Our results showed that a common electrode placed adjacent to the data line could shield capacitive coupling between the data line and the pixel electrodes, and reduce CCR from 13% to 2.4% and crosstalk intensity ratio (CIR) from 21.2% to 3.9%. We also report the common-overlapping-pixel structure that not only increases the aperture ratio by 1.28 times but also reduces CCR from 13% to 9.1%.
High-transmittance pixel- and common-electrode structures design for in-plane switching mode with low crosstalk
(2004-07-01)
Lin, JS
;
Yang, KH
;
Chen, SH
;
光電工程學系
;
Department of Photonics
The replacement of cathode ray tube (CRT) by thin-film-transistor liquid-crystal display (TFT-LCD) in TV applications requires the implementation of LC modes with wide viewing angles and excellent video display quality. Although the in-plane switching (IPS) mode has been known as an excellent technology for realizing wide viewing angles, it has a low aperture ratio that has been improved by Advanced Super-IPS (AS-IPS). In this paper, we propose a novel electrode structure that not only increases substantially the aperture ratio of the current AS-IPS but also reduces the crosstalk in terms of a capacitive coupling ratio from 1.2% to 0.05%.
Optimization on the thickness of organic insulator layer for advanced super-in-plane switching mode thin-film-transistor liquid crystal displays
(2005-08-01)
Lin, JS
;
Yang, KH
;
Chen, SH
;
光電工程學系
;
Department of Photonics
The growth rate of thin-film-transistor liquid crystal display (TFT-LCD) industries is faster than predicted due to the possible replacement of a cathode-ray tube television (CRT-TV) by a liquid crystal display television (LCD-TV). The in-plane switching (IPS) mode has been known as an excellent technology for realizing a wide viewing angle for LCD-TV, but it has the drawback of a low aperture ratio. An advanced super-IPS (AS-IPS) structure with an organic insulator layer was invented to achieve a high aperture ratio with increasing manufacturing cost. In this paper, we proposed a simple method of analyzing the optimum thickness of the organic insulator layer for AS-IPS. We derived the capacitive coupling ratio (CCR) of the IPS cell and analyzed the delay time of the AS-IPS panel to quantify the crosstalk properties. Furthermore, we also analyzed our electrode structure (AS'-IPS), which not only increases substantially the aperture ratio over that of AS-IPS but also reduces the crosstalk using the same optimized thickness of the organic insulator layer.