Browsing by Author "Yang, Kai-Hsiang"

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A 1.3 GHz-5.3 GHz Wideband, High Linearity Balun Low Noise Amplifier
(2011)
Yang, Kai-Hsiang
;
Kuo, Ming-Ching
;
Yan, Tzu-Chao
;
Kuo, Chien-Nan
;
電子工程學系及電子研究所
In this work, a balun low-noise amplifier (LNA) is designed and implemented in 0.18-mu m CMOS process. The bulk cross-coupling (BCC) and capacitance cross-coupling (CCC) techniques are introduced in this LNA, which not only increase gain and linearity but also decrease noise figure. The 3 dB bandwidth extends from 1.27 GHz to 5.31 GHz. The maximum differential gain is 10.13 dB. Measured at 3 GHz, P-1dB and IIP3 are -10 dBm and 0 dBm, respectively. The LNA core circuit dissipates 7.32 mW from 1.8 V power supply.
Depth Coding using Coded Boundary Patterns
(2012)
Yang, Kai-Hsiang
;
Hang, Hsueh-Ming
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The depth information plays an essential role in the virtual-view (or free-viewpoint) 3D video systems. In this paper, we propose a new algorithm to code a depth map for the purpose of virtual view synthesis. The idea is to use H. 264/AVC to represent the rough shape (including depth values) of a depth map and then additional information is transmitted to improve the depth values around the object boundaries. The complete encoding and decoding simulation system was built on the H. 264/AVC JM 18.0 platform. In our experiments, three tools can be turned on individually and thus four coding modes are defined and tested. Our data show that these proposed tools offer advantages in either coding efficiency or image quality improvement and some tools work best on simple images while the others work best on complex images. With proper parameter setting, the overall quality of virtual view rendering is noticeably improved.
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
(2014-06-01)
Chen, Ching-En
;
Chang, Ting-Chang
;
Chen, Hua-Mao
;
You, Bo
;
Yang, Kai-Hsiang
This letter investigates the abnormal OFF-current behavior induced by hot carrier stress (HCS) in p-channel double diffused drain metal-oxide-semiconductor transistors with a shallow trench isolation (STI) structure. According to ISE-TCAD simulation, the electric field at the drain-side corners of the high-voltage n-well (HVNW) adjacent to the STI trench is stronger than the electric field in the channel center in width direction. Moreover, because a nitride layer acts as a buffer in STI, the electrons generated by impact ionization at the corners of the HVNW can be easily trapped in the nitride layer or at the liner oxide/nitride layer interface. Furthermore, the extension of electron trapping in STI from drain to source during HCS forms the OFF-current conductive path. Based on the charge pumping measurements at different operation conditions, this path formation is further demonstrated by the comparisons of charge pumping measurements between initial state and after HCS.
The resistive switching characteristics in TaON films for nonvolatile memory applications
(2013-01-15)
Chen, Min-Chen
;
Chang, Ting-Chang
;
Chiu, Yi-Chieh
;
Chen, Shih-Cheng
;
Huang, Sheng-Yao
In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.