Browsing by Author "Yang, MY"

Now showing 1 - 10 of 10

Characteristics of Pb(Zr0.53Ti0.47)O-3 on metal and Al2O3/Si substrates
(2001-11-01)
Sun, CL
;
Chen, SY
;
Yang, MY
;
Chin, A
;
材料科學與工程學系
We have fabricated Pb(Zr0.53Ti0.47)O-3 on Pt and Pb(Zr0.53Ti0.47)O-3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O-3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O-3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of similar to3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O-3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O-3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O-3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory. (C) 2001 The Electrochemical Society.
Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
(2003-02-17)
Sun, CL
;
Chen, SY
;
Yang, MY
;
Chin, A
;
材料科學與工程學系
Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
Electrical and structural characteristics of PbTiO3 thin films with ultra-thin Al2O3 buffer layers
(2002-02-17)
Sun, CL
;
Chen, SY
;
Yang, MY
;
Chin, A
;
材料科學與工程學系
Polycrystalline PbTiO3 thin films have been prepared on Si substrates with ultra-thin SiO2 and Al2O3 buffer layers by chemical solution deposition, respectively. Although capacitance-voltage characteristics show hysteresis loops in both cases, the memory window of PbTiO3/Al2O3 stacked dielectric is 3.3V larger than that on SiO2. In addition, well-behaved capacitance-voltage characteristics are only obtained in PbTiO3/Al(2)o(3) and the PbTiO3 films on Al2O3 have the dielectric constant of 116 larger than 42 of PbTiO3 films on SiO2. The leakage current density of PbTiO3/Al2O3 dielectric is 1.3 x 10(-7) A cm(-2) at -2.5 V, which is low enough for deep sub-mum application. (C) 2002 Elsevier Science B.V. All rights reserved.
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom
(2000-07-01)
Wu, YH
;
Yang, MY
;
Chin, A
;
Chen, WJ
;
Kwei, CM
Electrical and reliability properties of ultrathin La2O3 gate dielectric have been investigated. The measured capacitance of 33 Angstrom La2O3 gate dielectric is 7.2 mu F/cm(2) that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 Angstrom. Good dielectric integrity is evidence from the low leakage current density of 0.06 A/cm(2) at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3 x 10(10) eV-1/cm(2), and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO2.
High density RF MIM capacitors using high-kappa AlTaOx dielectrics
(2003)
Huang, CH
;
Yang, MY
;
Chin, A
;
Zhu, CX
;
Li, MF
Very high capacitance density of 10 fF/mum(2) is measured using high-kappa AlTaOx, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.
High-density MIM canpacitors using AlTaOx dielectrics
(2003-05-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Li, MF
The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
High-density RF MIM capacitors using high-k La2O3 dielectrics
(2004)
Yang, MY
;
Yu, DS
;
Chin, A
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The integrity of the metal-insulator-metal (MM) capacitor with high-k La2O3 dielectrics formed using a 400degreesC back-end process was investigated. A very high capacitance per unit area of 9.2 fF/mum(2) was achieved for La2O3 MIM capacitors at 1 MHz, significantly reducing the chip size of radio frequency (rf) circuits. A mathematical derivation, involving measured S parameters, yielded the small voltage-dependent capacitance (DeltaC/C) less than or equal to 100 ppm at 1 GHz, indicating that the precision capacitor circuit can be applied in the rf regime. Furthermore, such a high capacitance density can be maintained as the frequency is increased from 10 KHz to 20 GHz with a large Q factor greater than or equal to90. (C) 2004 The Electrochemical Society.
Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate
(2005-06-01)
Cheng, CC
;
Chien, CH
;
Chen, CW
;
Hsu, SL
;
Yang, MY
We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfOxNy/Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 angstrom with a low leakage current of 1.8 x 10(-5) A/cm(2) at V-G = -1V was achieved after 600 degrees C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.
Stack gate PZT/Al2O3 one transistor ferroelectric memory
(2001-07-01)
Chin, A
;
Yang, MY
;
Sun, CL
;
Chen, SY
;
材料科學與工程學系
We have developed single transistor ferroelectric memory using stack gate PZT/Al2O3 structure. For the same similar to 40 Angstrom dielectric thickness, the PZT/Al2O3/Si gate dielectric has much better C-V characteristics and larger threshold voltage shift than those of PZT/SiO2/Si. Besides, the ferroelectric MOSFET also shows a large output current difference between programmed on state and erased off state, The <100 ns erase time is much faster than that of Flash memory where the switching time is limited by erase time.
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
(2003-10-01)
Yang, MY
;
Huang, CH
;
Chin, A
;
Zhu, CX
;
Cho, BJ
Using high-kappa, Al2O3 doped Ta2O5 dielectric, we have obtained record high MINI capacitance density of 17 fF/mum(2) at 100 KHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9 x 10(-7) A/cm(2). In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2 x 10(-12) A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-mum MOSFET. This very high capacitance density with good MINI capacitor characteristics can significantly reduce the chip size of RF ICs.