Browsing by Author "Yang, Ren-Ya"

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Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs
(2014-12-01)
Liu, Kuan-Ju
;
Chang, Ting-Chang
;
Yang, Ren-Ya
;
Chen, Ching-En
;
Ho, Szu-Han
This letter investigates abnormal degradation behavior after hot-carrier stress in partially-depleted silicon-oninsulator n-channel metal-oxide-semiconductor field effect transistors. It is found that the hot-carrier-induced degradation under floating body (FB) operation is more serious than that under grounded body (GB) operation due to the floating body effect (FBE). Furthermore, the degradation is independent on temperature under GB operation, because impact ionization is virtually independent on temperature under large VD. However, the degradation under FB operation becomes less serious with increasing temperature. This is due to a smaller source/body PN junction band offset at a high temperature, which causes fewer accumulated holes at the body terminal and reduces the FBE. (C) 2014 Elsevier B.V. All rights reserved.
Investigation of defect-induced abnormal body current in fin field-effect-transistors
(2015-08-24)
Liu, Kuan-Ju
;
Chang, Ting-Chang
;
Chen, Ching-En
;
Yang, Ren-Ya
;
Tsai, Jyun-Yu
This letter investigates the mechanism of abnormal body current at the linear region in n-channel high-k/metal gate stack fin field effect transistors. Unlike body current, which is generated by impact ionization at high drain voltages, abnormal body current was found to increase with decreasing drain voltages. Notably, the unusual body leakage only occurs in three-dimensional structure devices. Based on measurements under different operation conditions, the abnormal body current can be attributed to fin surface defect-induced leakage current, and the mechanism is electron tunneling to the fin via the defects, resulting in holes left at the body terminal. (C) 2015 AIP Publishing LLC.